Electronic system component FUXINSEMI BAS21HT1G designed for broad application in electronic circuits

Key Attributes
Model Number: BAS21HT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Leakage Current (Ir):
100nA@250V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
250V
Pd - Power Dissipation:
250mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS21HT1G
Package:
SOD-123
Product Description

Product Overview

The BAS21HT1G is a component designed for electronic applications. While specific functional details and application scenarios are not fully elaborated in the provided text, its designation suggests it is a part intended for integration into various electronic systems.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified

Technical Specifications

Model Quantity
BAS21HT1G 5
BAS21HT1G 10
BAS21HT1G 25
BAS21HT1G 50
BAS21HT1G 100
BAS21HT1G 200
BAS21HT1G 250
BAS21HT1G 500
BAS21HT1G 1000

2409302201_FUXINSEMI-BAS21HT1G_C7422629.pdf

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