Power MOSFET FM 40S13 Featuring Ultra Low RDS ON Suitable for Wireless Chargers and DC DC Converters
Key Attributes
Model Number:
40S13
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-55℃~+175℃
RDS(on):
25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
64pF@20V
Pd - Power Dissipation:
19W
Input Capacitance(Ciss):
588pF@20V
Gate Charge(Qg):
13.6nC@10V
Mfr. Part #:
40S13
Package:
SOP-8
Product Description
Product Overview
The 40S13 is an N-Channel Trench Power MOSFET from Fine Made Microelectronics Group Co., Ltd. It features a high-density cell design for ultra-low RDS(ON), making it suitable for DC/DC converters, wireless chargers, and synchronous rectification applications. Lead-free and green devices are available, complying with RoHS standards.
Product Attributes
- Brand: Fine Made Microelectronics Group Co., Ltd.
- Product Code: 40S13
- Certifications: RoHS Compliant (Lead Free and Green Devices Available)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Off Characteristic | V(BR)DSS | VGS=0V,ID=250A | 40 | - | - | V |
| IDSS | VDS =40V, VGS = 0V | - | - | 1.0 | A | |
| IGSS | VDS =0V,VGS = 20V | - | - | 100 | nA | |
| On Characteristic | VGS(th) | VDS= VGS, ID=250A | 1.0 | 1.5 | 2.5 | V |
| RDS(on) | VGS =10V, ID =10A | - | 15 | 20 | m | |
| VGS =4.5V, ID =8A | - | 20 | 25 | m | ||
| Dynamic Characteristic | Ciss | VDS = 20V, VGS =0V, f = 1.0MHz | - | 588 | - | pF |
| Coss | VDS = 20V, VGS =0V, f = 1.0MHz | - | 112 | - | pF | |
| Crss | VDS = 20V, VGS =0V, f = 1.0MHz | - | 64 | - | pF | |
| Gate Charge | Qg | VDS =20V, ID =20A, VGS =10V | - | 13.6 | - | nC |
| Qgs | VDS =20V, ID =20A, VGS =10V | - | 3.5 | - | nC | |
| Qgd | VDS =20V, ID =20A, VGS =10V | - | 6.4 | - | nC | |
| Switching Characteristic | td(on) | V DD=20V, ID =20A, RL=1, RGEN=3, VGS =10V | - | 5.8 | - | ns |
| tr | V DD=20V, ID =20A, RL=1, RGEN=3, VGS =10V | - | 11.7 | - | ns | |
| td(off) | V DD=20V, ID =20A, RL=1, RGEN=3, VGS =10V | - | 15 | - | ns | |
| tf | V DD=20V, ID =20A, RL=1, RGEN=3, VGS =10V | - | 5.2 | - | ns | |
| Drain-Source Diode | IS | - | - | - | 18 | A |
| ISM | - | - | - | 68 | A | |
| VSD | VGS =0V, IS=20A | - | - | 1.2 | V | |
| trr | TJ=25, IF=20A,dI/dt=100A/s | - | 9.5 | - | ns | |
| Qrr | TJ=25, IF=20A,dI/dt=100A/s | - | 15.2 | - | nC | |
| Absolute Maximum Ratings | VDSS | - | - | - | 40 | V |
| VGSS | - | - | 20 | - | V | |
| ID | TC = 25 | - | - | 18 | A | |
| TC = 100 | - | - | 10 | A | ||
| IDM | note1 | - | - | 68 | A | |
| EAS | note2 | - | 14 | - | mJ | |
| PD | TC = 25 | - | - | 19 | W | |
| RJC | - | - | 4.62 | /W | ||
| TJ, TSTG | - | -55 | - | +175 |
2411121101_FM-40S13_C2932017.pdf
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