Power control TRIAC FUXINSEMI BTA201-800E with 2 amp RMS current and durable glass passivated junctions in TO-92 package
Key Attributes
Model Number:
BTA201-800E
Product Custom Attributes
Holding Current (Ih):
15mA
Current - Gate Trigger(Igt):
10mA
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
2A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
20A
Gate Trigger Voltage (Vgt):
1.3V
Operating Temperature:
-40℃~+150℃
Mfr. Part #:
BTA201-800E
Package:
TO-92
Product Description
Product Overview
The BTA201-800E is a TRIAC designed for high voltage and surge capability, featuring glass-passivated junctions for enhanced durability. It offers low thermal resistance and is capable of triggering in three quadrants, making it suitable for various power control applications including static relays, heating regulation, induction motor starting circuits, phase control in light dimmers, and motor speed controllers.
Product Attributes
- Brand: Fuxin Semiconductor (implied by www.fuxinsemi.com)
- Model: BTA201-800E
- Package Type: TO-92
- Quadrant Triggering: 3
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Repetitive peak off-state voltage | VDRM | 800 | V | (Tj=25) |
| Repetitive peak reverse voltage | VRRM | 800 | V | (Tj=25) |
| RMS on-state current | IT(RMS) | 2 | A | TO-92 (Tj=90) |
| Non repetitive surge peak on-state current | ITSM | 20 | A | (full cycle, F=50Hz) |
| I2t value for fusing | I2t | 2 | A2S | (tp=10ms) |
| Critical rate of rise of on-state current | di/dt | 50 | A/S | (It =2IGT) |
| Peak gate current | IGM | 2 | A | |
| Average gate power dissipation | PG(AV) | 0.5 | W | |
| Junction to case Thermal Resistance | Rth(j-c) | 15 | /W | (AC) TO-92 |
| Gate Trigger Current | IGT | 10 | mA | VD=12V,IT=0.1A, Tj=25 (,,) |
| Gate Trigger Voltage | VGT | 1.3 | V | (,,) |
| Gate Non-trigger Voltage | VGD | 0.2 (MIN.) | V | VD=VDRM, Tj=125 (,,) |
| Latching Current | IL | 25 | mA | IG=1.2IGT (-) |
| Holding Current | IH | 15 | mA | IT=100mA () |
| Critical dV/dt | dV/dt | 600 (MIN.) | V/s | VD=2/3VDRM, Gate Open, Tj=125 |
| On-state Voltage | VTM | 1.55 (MAX.) | V | ITM=2.8A, tp=380s, Tj =25 |
| Off-state Current | IDRM | 10 (MAX.) | A | VD=VDRM, Tj =25 |
| Reverse Leakage Current | IRRM | 1.0 (MAX.) | mA | VR=VRRM, Tj =125 |
2412301635_FUXINSEMI-BTA201-800E_C42371332.pdf
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