SOT23 packaged transistor FUXINSEMI S8550 designed for surface mount and complementary to S8050 transistor

Key Attributes
Model Number: S8550
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
150MHz
Type:
PNP
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8550
Package:
SOT-23
Product Description

Product Overview

This product is a high collector current transistor, complementary to the S8050, designed for general-purpose applications. It features a SOT-23 package for surface mounting.

Product Attributes

  • Brand: FUXINSEMICONDUCTOR
  • Package Type: SOT-23
  • Complementary to: S8050

Technical Specifications

ParameterSymbolTest ConditionsMinMaxUnit
Collector-Base VoltageVCBO-40V
Collector-Emitter VoltageVCEO-25V
Emitter-Base VoltageVEBO-5V
Collector CurrentIC-0.5A
Collector Power DissipationPCTa=25300mW
Thermal Resistance (Junction to Ambient)RJA417/W
Junction TemperatureTj150
Storage TemperatureTstg-55+150
Collector-base breakdown voltageV(BR)CBOIC = -100A, IE=0-40V
Collector-emitter breakdown voltageV(BR)CEOIC =-1mA, IB=0-25V
Emitter-base breakdown voltageV(BR)EBOIE= -100A, IC=0-5V
Collector cut-off currentICBOVCB= -40V, IE=0-0.1A
Collector cut-off currentICEOVCE= -20V, IB=0-0.1A
Emitter cut-off currentIEBOVEB= -3V, IC=0-0.1A
DC current gainhFE(1)VCE= -1V, IC= -50mA120400
DC current gainhFE(2)VCE= -1V, IC= -500mA50
Collector-emitter saturation voltageVCE(sat)IC=-500mA, IB= -50mA-0.6V
Base-emitter saturation voltageVBE(sat)IC=-500mA, IB= -50mA-1.2V
Transition frequencyfTVCE= -6V, IC= -20mA, f=30MHz150MHz

2010271837_FUXINSEMI-S8550_C908253.pdf

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