1 amp sensitive gate scr FUXINSEMI MCR100-8W with high shock loading and electromagnetic interference resistance
Key Attributes
Model Number:
MCR100-8W
Product Custom Attributes
Holding Current (Ih):
4mA
Current - Gate Trigger(Igt):
100uA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
1A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
12A@50Hz
SCR Type:
-
Operating Temperature:
-
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
MCR100-8W
Package:
SOT-223
Product Description
Product Overview
The MCR100-8W is a 1.0A sensitive gate SCR from Fuxin Semiconductor, designed with high shock loading capability and strong resistance to electromagnetic interference. It is suitable for various applications including power chargers, T-tools, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: Fuxin Semiconductor
- Package: SOT-223-3L
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Repetitive peak off-state voltage | VDRM | 600 | V | |
| 800 | ||||
| Repetitive peak reverse voltage | VRRM | 600 | V | |
| 800 | ||||
| RMS on-state current | IT(RMS) | 1.0 | A | |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 12 | A | |
| I2t value for fusing (tp=10ms) | I2t | 0.72 | A2s | |
| Critical rate of rise of on-state current (IG =2IGT) | dIT/dt | 50 | A/s | |
| Peak gate current | IGM | 0.5 | A | |
| Average gate power dissipation | PG(AV) | 0.1 | W | |
| Junction Temperature | TJ | -40 ~ +110 | ||
| Storage Temperature | TSTG | -40 ~ +150 | ||
| Gate trigger current | IGT | 100 | A | VD =12V, IT=10mA, Tj =25 |
| Gate trigger voltage | VGT | 0.8 | V | |
| Gate non-trigger voltage | VGD | 0.2 | V | VD =1/2VDRM, Tj =110 |
| Latching current | IL | 5 | mA | VD =12V, IG=0.5mA, RGK=1k, Tj =25 |
| Holding current | IH | 4 | mA | |
| Critical-rate of rise of commutation voltage | dVD/dt | 50 | V/s | VD=2/3VDRM, Gate Open, Tj =110 |
| Forward "on" voltage | VTM | 1.7 | V | ITM =2A, tp=380s |
| Repetitive Peak Off-State Current | IDRM | 5 | A | VD =VDRM, Tj=25 |
| Repetitive Peak Reverse Current | IRRM | 0.1 | mA | VR =VRRM, Tj=110 |
| Thermal resistance Junction to case | Rth(j-c) | 20 | /W | TYP. |
| Thermal resistance Junction to ambient | Rth(j-a) | 60 | /W | TYP. |
2112281630_FUXINSEMI-MCR100-8W_C2904269.pdf
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