4 Quadrant 1 Amp TRIAC Semiconductor FUXINSEMI BT131S Suitable for Inductive Loads Including Vacuums
Key Attributes
Model Number:
BT131S
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
5mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
1A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
16A@50Hz
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BT131S
Package:
SOT-223
Product Description
Product Overview
The BT131S is a 1.0A, 4-quadrant TRIAC series designed for high shock loading capability and excellent commutation performance. It is particularly recommended for inductive loads in applications such as washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: Fuxin Semiconductor
- Package: SOT-223-3L
- Series: BT131S
- Quadrants: 4
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Condition |
| IT(RMS) | RMS on-state current | 1 | A | |
| VDRM | Repetitive peak off-state voltage | 60 | V | |
| VRRM | Repetitive peak reverse voltage | 60 | V | |
| VTM | Forward "on" voltage | 1.55 | V | ITM =1.5A, tp=380s |
| ITSM | Non repetitive surge peak on-state current (full cycle, F=50Hz) | 16 | A | |
| I2t | I2t value for fusing (tp=10ms) | 1.28 | A2s | |
| dI/dt | Critical rate of rise of on-state current (IG =2IGT) | 50 (--), 10 () | A/s | |
| IGM | Peak gate current | 2 | A | |
| PG(AV) | Average gate power dissipation | 0.5 | W | |
| TJ | Junction Temperature | -40 ~ +125 | ||
| TSTG | Storage Temperature | -40 ~ +150 | ||
| IGT | Gate trigger current | MAX. 5 (--), 10 () | mA | VD =12V, IT = 0.1A, Tj =25 |
| VGT | Gate trigger voltage | MAX. 1.3 | V | |
| VGD | Gate non-trigger voltage | MIN. 0.2 | V | VD =VDRM, Tj =125 |
| IL | Latching current | MAX. 10 (--), 15 () | mA | VD =12V, IGT = 0.1A, Tj =25 |
| IH | Holding current | MAX. 5 | mA | |
| dV/dt | Critical-rate of rise of commutation voltage | MIN. 50 | V/s | VD=2/3VDRM, Gate Open, Tj =125 |
| IDRM | Repetitive Peak Off-State Current | MAX. 5 | A | VD =VDRM, Tj=25 |
| IRRM | Repetitive Peak Reverse Current | MAX. 100 | A | VR =VRRM, Tj=125 |
| Rth(j-c) | Junction to case (AC) | TYP. 23 | /W | |
| Rth(j-a) | Junction to ambient | TYP. 60 | /W |
2210311230_FUXINSEMI-BT131S_C784602.pdf
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