FUXINSEMI DB207S miniature bridge rectifier with molded plastic technology and high voltage rating

Name: FUXINSEMI DB207S miniature bridge rectifier with molded plastic technology and high voltage rating
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: DB207S
Availability: InStock

Key Attributes

Model Number: DB207S

Product Custom Attributes

Non-Repetitive Peak Forward Surge Current:

60A

Operating Junction Temperature Range:

-55℃~+150℃@(Tj)

Voltage - Forward(Vf@If):

1.1V@2A

Current - Rectified:

Voltage - DC Reverse(Vr):

1kV

Mfr. Part #:

DB207S

Package:

DBS

Product Description

Product Overview

The Fuxinsemi DB201S through DB207S series are miniature, single-phase, surface-mount bridge rectifiers designed for applications requiring high surge overload capabilities. These devices offer reliable low-cost construction utilizing molded plastic technology and glass-passivated chip junctions, making them ideal for automated replacement and space-saving on printed circuit boards. They meet RoHS requirements and are suitable for a wide range of voltage ratings from 50V to 1000V.

Product Attributes

Brand: Fuxinsemi
Construction: Molded plastic technology
Chip Junctions: Glass passivated
Flame Retardant: UL94-V0 rated
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: Marked on body
Mounting Position: Any
Certifications: RoHS compliant (lead-free parts)
Optional Suffix: "-H" indicates Halogen free part

Technical Specifications

Characteristic	Symbol	DB201S	DB202S	DB203S	DB204S	DB205S	DB206S	DB207S	Unit
Maximum Recurrent Peak Reverse Voltage	VRRM	50	100	200	400	600	800	1000	V
Maximum RMS Voltage	VRMS	35	70	140	280	420	560	700	V
Maximum DC Blocking Voltage	VDC	50	100	200	400	600	800	1000	V
Maximum Average Forward Rectified Current @ T_A=25	I(AV)	2.0							A
Peak Forward Surge Current 8.3ms Single Half Sine-Wave Super Imposed on Rated Load (JEDEC Method)	IFSM	60							A
Maximum Forward Voltage at 2.0A DC	VF	1.1							V
Maximum DC Reverse Current @ T_J=25 at Rated DC Blocking Voltage	IR	500							A
Maximum DC Reverse Current @ T_J=125 at Rated DC Blocking Voltage	IR	10							mA
I²t Rating for Fusing (t<8.3ms)	I²t	15, 25, 40							A²s
Typical Junction Capacitance Per Element (Note 1)	C_J	15							pF
Typical Thermal Resistance (Note 2)	R_JA	40							/W
Operating Temperature Range	T_J	-55 to +150
Storage Temperature Range	T_STG	-55 to +150

Note 1: Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

Note 2: Thermal resistance from junction to ambient mounted on P.C.B with 0.5*0.5"(13*13mm) copper pads.

Package Dimensions (DBS)

Symbol	Dimension (inches)	Dimension (mm)
A	.255	6.5
B	.335	8.5
C	.096	2.45
D	.406	10.3
E	.013	.33
F	.060	1.5
G	.205	5.2
H	.343	8.7
I	.047	1.20
J	.245	6.2
K	.307	7.8
L	.089	2.25
M	.391	10.0
N	.003	.08
O	.040	1.0
P	.197	5.0
Q	.319	8.1
R	.037	0.95

Marking Information

Type Number	Marking
DB201S	DB201S
DB202S	DB202S
DB203S	DB203S
DB204S	DB204S
DB205S	DB205S
DB206S	DB206S
DB207S	DB207S
Halogen-Free Option	Add "-H" suffix

Soldering Conditions (Reflow Soldering)

Parameter	Value	Unit
Preheat Temperature (Tsmin to Tsmax)	150 - 200	C
Preheat Time (ts)	60 - 120	sec
Time maintained above Temperature (TL)	217	C
Time within 5C of actual Peak Temperature (tp)	10 - 30	sec
Peak Temperature (TP)	255 (0/+5)	C
Ramp-up Rate (Tsmin to TP)	< 3	C/sec
Ramp-down Rate	< 6	C/sec

Storage Environment: Temperature = 5 ~40 C, Humidity = 55%25%.

2011091105_FUXINSEMI-DB207S_C915621.pdf

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