Medium power amplification switching transistor FUXINSEMI MMBT5551 NPN silicon type with SOT23 package

Key Attributes
Model Number: MMBT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBT5551
Package:
SOT-23
Product Description

Product Overview

The MMBT5551 is a high voltage NPN silicon transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401 and offers excellent performance characteristics.

Product Attributes

  • Brand: FUXINSEMICONDUCTOR
  • Type: NPN Silicon Transistor
  • Package: SOT-23
  • Complementary to: MMBT5401

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base Breakdown VoltageV(BR)CBOIC=100A, IE=0180V
Collector-Emitter Breakdown VoltageV(BR)CEOIC=1mA, IB=0160V
Emitter-Base Breakdown VoltageV(BR)EBOIE=10A, IC=06V
Collector Cut-off CurrentICBOVCB=120V, IE=050nA
Emitter Cut-off CurrentIEBOVEB=4V, IC=050nA
DC Current GainhFE(1)VCE=5V, IC=1mA80
hFE(2)VCE=5V, IC=10mA100300
hFE(3)VCE=5V, IC=50mA
Collector-Emitter Saturation VoltageVCE(sat)1IC=10mA, IB=1mA0.15V
VCE(sat)2IC=50mA, IB=5mA0.2V
Base-Emitter Saturation VoltageVBE(sat)1IC=10mA, IB=1mA1V
VBE(sat)2IC=50mA, IB=5mA1V
Transition FrequencyfTVCE=10V,IC=10mA, f=100MHz100300MHz
Collector Output CapacitanceCobVCB=10V, IE=0, f=1MHz6pF
Collector Power DissipationPCTa=25300mW
Thermal Resistance Junction To AmbientRJA416/W
Operation Junction and Storage Temperature RangeTJ,Tstg-55+150

2101141105_FUXINSEMI-MMBT5551_C908261.pdf

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