Dual transistor PNP PNP SOT363 package featuring FUXINSEMI BCM857BS for compact electronic circuits
Key Attributes
Model Number:
BCM857BS
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
45V
Mfr. Part #:
BCM857BS
Package:
SOT-363
Product Description
Product Overview
The BCM8 57 BS 420 240 is a dual PNP+PNP transistor housed in a SOT-363 package. It offers the advantage of integrating two transistors into a single component, thereby reducing the number of components and board space required. This configuration also ensures no mutual interference between the transistors, making it suitable for applications where space and component count are critical.
Product Attributes
- Marking: 3F
- Type: DUAL TRANSISTOR (PNP+PNP)
- Package: SOT-363
- Brand: Fuxin (implied by www.fuxinsemi.com)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | Ic=-10A,IE=0 | -50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | Ic=-10mA,IB=0 | -45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-30V,IE=0 | -15 | nA | ||
| DC current gain | hFE | VCE=-5V,IC=-2mA | ||||
| Collector-emitter saturation voltage (1) | VCE(sat)(1) | IC=-10mA,IB=-0.5mA | -0.3 | V | ||
| Collector-emitter saturation voltage (2) | VCE(sat)(2) | IC=-100mA,IB=-5mA | -0.65 | V | ||
| Base-emitter voltage (1) | VBE(1) | VCE=-5V,IC=-2mA | -0.6 | -0.75 | V | |
| Base-emitter voltage (2) | VBE(2) | VCE=-5V,IC=-10mA | -0.82 | V | ||
| Transition frequency | fT | VCE=-5V,IC=-10mA,f=100MHz | 200 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V,IE=0,f=1MHz | 3.5 | pF | ||
| Noise figure | NF | VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2K,BW=200Hz | 2.5 | dB | ||
| Collector-Base Voltage | VCBO | -50 | V | |||
| Collector-Emitter Voltage | VCEO | -45 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current -Continuous | IC | -0.2 | A | |||
| Collector Power Dissipation | PC | 0.3 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 417 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 |
2401121839_FUXINSEMI-BCM857BS_C20426291.pdf
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