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quality Switching Diode FUXINSEMI 1N4148WS Surface Mount SOD323 Silicon Epitaxial Planar Chip RoHS Compliant factory
quality Switching Diode FUXINSEMI 1N4148WS Surface Mount SOD323 Silicon Epitaxial Planar Chip RoHS Compliant factory

Switching Diode FUXINSEMI 1N4148WS Surface Mount SOD323 Silicon Epitaxial Planar Chip RoHS Compliant

Key Attributes
Model Number: 1N4148WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@75V
Reverse Recovery Time (trr):
8ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
75V
Diode Configuration:
Independent
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
200mA
Mfr. Part #:
1N4148WS
Package:
SOD-323(SC-90)
Product Description

Product Overview

The 1N4148WS is a 100V surface mount switching diode designed for fast switching speeds and high conductance. Electrically identical to standard JEDEC specifications, it is housed in a tiny plastic SMD package (SOD-323) ideally suited for automatic insertion. This diode is manufactured using silicon epitaxial planar chip technology and is lead-free, exceeding environmental standards. It is suitable for applications requiring efficient switching and a compact form factor.

Product Attributes

  • Brand: Fuxin Semiconductor (implied by URL)
  • Package Type: Surface Mount SOD-323
  • Material: Silicon epitaxial planar chip
  • Flame Retardant: UL94-V0 rated
  • Lead-free: Yes
  • RoHS Compliant: Yes
  • Halogen-free Compliant: Yes
  • Polarity: Indicated by cathode band
  • Mounting Position: Any
  • Marking Type number: 1N4148WS
  • Marking Code: T4

Technical Specifications

Parameter Symbol 1N4148WS Unit Notes
Maximum peak reverse voltage VRM 75 V
Maximum RMS voltage VRMS 100 V
Maximum DC blocking voltage 100 V
Maximum peak forward surge current, 1.0us IFSM 2.0 A
Maximum power dissipation derate above 25C PD 200 mW
Maximum forward voltage VF 0.715 V @IF=0.001A
0.855 V @IF=0.01A
1.0 V @IF=0.05A
1.25 V @IF=0.15A
Maximum average forward current at T = 25C IO mA
Maximum DC reverse current at rated DC blocking voltage T = 25C IR 0.025 uA @VR=20V
Junction capacitance CJ 2.0 pF Typical, at VR=0V, f=1MHz
Typical thermal resistance junction to ambient RJA 500 C/W
Operating junction and Storage Temperature Range TJ, TSTG -55 to +150 C
Maximum reverse recovery time trr 0.0 ns From IF=10mA to IR=1mA, VR=6V, RL=100ohm
1.0 @VR=75V
Dimensions (SOD-323) 0.039(1.00) x 0.071(1.80) x 0.108(2.75) inches (mm) (Length x Width x Height - approximate based on drawing)
Terminal plating Plated terminals, solderable per MIL-STD-750, Method 2026

2010271837_FUXINSEMI-1N4148WS_C908249.pdf

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