PNP transistor FUXINSEMI MMBT5401 in SOT23 package optimized for medium power amplification switching
Key Attributes
Model Number:
MMBT5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT5401
Package:
SOT-23
Product Description
MMBT5401 TRANSISTOR (PNP) SOT-23
The MMBT5401 is a PNP transistor in a SOT-23 package, designed for medium power amplification and switching applications. It is complementary to the MMBT5551 transistor.
Product Attributes
- Marking: 2L
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | VCBO | Collector-Base Voltage | -160 | V | ||
| VCEO | Collector-Emitter Voltage | -150 | V | |||
| VEBO | Emitter-Base Voltage | -5 | V | |||
| IC | Collector Current | -0.6 | A | |||
| PC | Collector Power Dissipation | 0.3 | W | |||
| RJA | Thermal Resistance from Junction to Ambient | 416 | /W | |||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 | +150 | |||
| Electrical Characteristics | V(BR)CBO | Collector-base breakdown voltage (IC=-100A, IE=0) | -160 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage (IC=-1mA, IB=0) | -150 | V | |||
| V(BR)EBO | Emitter-base breakdown voltage (IE=-10A, IC=0) | -5 | V | |||
| ICBO | Collector cut-off current (VCB=-120V, IE=0) | -0.1 | A | |||
| IEBO | Emitter cut-off current (VEB=-4V, IC=0) | -0.1 | A | |||
| hFE(1) | DC current gain (VCE=-5V, IC=-1mA) | 80 | ||||
| hFE(2) | DC current gain (VCE=-5V, IC=-10mA) | 100 | 300 | |||
| VCE(sat)1 | Collector-emitter saturation voltage (IC=-10mA, IB=-1mA) | -0.2 | V | |||
| VBE(sat)1 | Base-emitter saturation voltage (IC=-10mA, IB=-1mA) | -1 | V | |||
| fT | Transition frequency (VCE=-5V,IC=-10mA, f=30MHz) | 100 | MHz |
hFE Classification
| RANK | L | H |
| RANGE | 100-200 | 200-300 |
SOT-23 Package Information
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.200 | 1.400 | 0.047 | 0.055 |
| E1 | 2.250 | 2.550 | 0.089 | 0.100 |
| e | 0.950 TYP. | 0.037 TYP. | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.550 REF. | 0.022 REF. | ||
| L1 | 0.300 | 0.500 | 0.012 | 0.020 |
2201121630_FUXINSEMI-MMBT5401_C2934843.pdf
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