Single phase half wave rectifier FUXINSEMI B360AE offering 60 volt dc blocking voltage for resistive inductive load
Key Attributes
Model Number:
B360AE
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@60V
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
650mV@3A
Current - Rectified:
3A
Mfr. Part #:
B360AE
Package:
SMA(DO-214AC)
Product Description
Product Overview
The B350AE and B360AE are single-phase, half-wave rectifiers designed for applications requiring a 60Hz resistive or inductive load. They offer a DC blocking voltage of up to 50V (B350AE) and 60V (B360AE), with an average rectified output current of 3A. These rectifiers are suitable for use in various electronic circuits where efficient rectification is needed.
Product Attributes
- Brand: Fuxin Semiconductor (implied by domain www.fuxinsemi.com)
Technical Specifications
| Characteristic | Symbol | B350AE | B360AE | Unit | Test Condition |
|---|---|---|---|---|---|
| Maximum Ratings (@TA = +25C, unless otherwise specified.) | |||||
| Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. | |||||
| Peak Repetitive Reverse Voltage | VRRM | 50 | 60 | V | |
| Working Peak Reverse Voltage | VRWM | 50 | 60 | V | |
| DC Blocking Voltage | VRM | 50 | 60 | V | |
| Average Rectified Output Current | IO | 3 | 3 | A | Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. |
| Non-Repetitive Peak Forward Surge Current | IFSM | 80 | 80 | A | 8.3ms Single Half Sine-Wave Superimposed on Rated Load |
| Thermal Characteristics | |||||
| Typical Thermal Resistance Junction to Ambient (Note 1) | RJA | 60 | 60 | C/W | |
| Typical Thermal Resistance Junction to Case (Note 2) | RJC | 30 | 30 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | ||
| Electrical Characteristics (@TA = +25C, unless otherwise specified.) | |||||
| Forward Voltage Drop | VF | 0.55 | V | IF = 3A, TJ = +25C | |
| 0.52 | V | IF = 3A, TJ = +125C | |||
| 0.65 | V | ||||
| Leakage Current (Note 3) | IR | 0.1 | mA | VR = 50V, TJ = +25C (B350AE) | |
| 0.1 | mA | VR = 60V, TJ = +25C (B360AE) | |||
| mA | VR = 60V, TJ = +125C (B360AE) | ||||
| Typical Capacitance | CT | 125 | pF | VR = 4.0V, f = 1MHz | |
Notes:
- 1. Device mounted on FR-4 substate, 1"*1", 2oz, single-sided, PC boards with 0.56"*0.73" copper pad.
- 2. Short duration pulse test used to minimize self-heating effect.
2306191401_FUXINSEMI-B360AE_C6807780.pdf
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