600 volt rectifier diode FUXINSEMI MURS160T3G-FS with 1 amp forward current and halogen free design
Key Attributes
Model Number:
MURS160T3G-FS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
35A
Reverse Leakage Current (Ir):
5uA@4V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
1.25V@1A
Current - Rectified:
1A
Mfr. Part #:
MURS160T3G-FS
Package:
SMB(DO-214AA)
Product Description
Product Overview
The MURS160T3G-FS is a high-performance rectifier designed for various applications. It features a maximum repetitive peak reverse voltage of 600V and a maximum average forward rectified current of 1A. This component is compliant with Halogen-free standards and operates within a wide temperature range, making it suitable for demanding industrial environments.
Product Attributes
- Brand: Likely ON Semiconductor (inferred from common datasheet patterns, but not explicitly stated)
- Compliance: Halogen-free
- Package: SMB/DO-214AA
Technical Specifications
| Parameter | Symbol | Units | Value | Condition |
|---|---|---|---|---|
| Maximum RMS voltage | VRMS | V | 420 | |
| Maximum continuous reverse voltage | VR | V | 600 | |
| Maximum average forward rectified current | IO | A | 1.0 | (Tj = 150C) |
| Maximum instantaneous forward voltage | VF | V | 1.05 | IF = 1.0 A, T = 25C |
| Maximum reverse leakage current at rated VR | IR | A | 0.420 | VR = 600 V, T = 25C |
| Typical thermal resistance junction to ambient | RJA | C / W | 55 to 175 | (Note 3) |
| Typical thermal resistance junction to case | RJC | C / W | 15 | (Note 3) |
| Maximum repetitive peak reverse voltage | VRRM | V | 600 | |
| Non-repetitive peak forward surge current 8.3ms single half sine-wave | IFSM | A | 15 | |
| Operating junction temperature range | TJ | C | -65 to 175 | |
| Storage temperature range | TSTG | C | -65 to 175 | |
| Maximum reverse recovery time | trr | ns | 50 | (Note 2) |
| Typical junction capacitance | CJ | pF | 15 | (Note 1) |
| Model | MURS160T3G-FS |
Notes:
1: Measured at 1 MHz and applied reverse voltage of 4.0 VDC.
2: Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A.
3: Mounted on FR-4 PCB Copper, minimum recommended pad layout.
2512291554_FUXINSEMI-MURS160T3G-FS_C5563724.pdf
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