Single Phase Bridge Rectifier FUXINSEMI KMB110S Featuring Silicon Epitaxial Chip and RoHS Compliance

Name: Single Phase Bridge Rectifier FUXINSEMI KMB110S Featuring Silicon Epitaxial Chip and RoHS Compliance
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: KMB110S
Availability: InStock

Key Attributes

Model Number: KMB110S

Product Custom Attributes

Non-Repetitive Peak Forward Surge Current:

30A

Reverse Leakage Current (Ir):

200uA@100V

Operating Junction Temperature Range:

-55℃~+150℃

Voltage - DC Reverse (Vr) (Max):

100V

Voltage - Forward(Vf@If):

920mV@1A

Current - Rectified:

Mfr. Part #:

KMB110S

Package:

MBS

Product Description

Product Overview

The MBS KMB series offers 1.0A Surface Mount Schottky Barrier Single-Phase Bridge Rectifiers with voltage ratings from 20V to 200V. These rectifiers feature a low profile mini-dip bridge design, saving space on printed circuit boards and are ideal for automated replacement. Constructed with silicon epitaxial chip and metal silicon junction, they provide reliable, low-cost performance. Lead-free parts meet RoHS requirements.

Product Attributes

Brand: MBS
Material: Silicon epitaxial chip, metal silicon junction
Flame Retardant: UL94-V0 rated
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: Marked on body
Mounting Position: Any
Certifications: RoHS compliant (lead-free parts)

Technical Specifications

Parameter	Symbol	KMB12S	KMB14S	KMB16S	KMB110S	KMB115S	KMB120S	Units
Maximum repetitive peak reverse voltage	VRRM	20	40	60	100	150	200	V
Maximum RMS voltage	VRMS	14	28	42	70	105	140	V
Maximum DC blocking voltage	VDC	20	40	60	100	150	200	V
Maximum average forward rectified current at TL(see fig.1)	I(AV)	1.0						A
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load	IFSM	30.0						A
Maximum instantaneous forward voltage at 1.0A	VF	0.55	0.55	0.55	0.70	0.85	0.92	V
Maximum DC reverse current TJ=25 C at rated DC blocking voltage	IR	0.2						mA
Maximum DC reverse current TJ=100 C	IR	10.0						mA
Typical junction capacitance (NOTE 1)	CJ	75						pF
Typical thermal resistance (NOTE 2)	RJA	40						C/W
Operating junction temperature range	TJ	-55 to +150						C
Storage temperature range	TSTG	-55 to +125						C

Note 1: Measured at 1.0MHz and applied reverse voltage of 4.0V DC

Note 2: Thermal resistance from junction to ambient mounted on P.C.B with 0.5*0.5"(13*13mm)copper pads.

Package Outline Dimensions (mm/inch):

Symbol	Unit (mm)	Unit (inch)
A	1.7	0.067
B	6.30	0.248
C	4.40	0.173
D	0.049	0.002
E	8.10	0.319
F	1.25	0.049
K	1.0	0.039

Soldering Condition:

Process	Parameter	Value	Unit
Reflow soldering	Preheat Temperature (Tsmin to Tsmax)	150 - 200	C
	Time (tsmax to Tsmin)	60 - 120	sec
	Time maintained above: Temperature (TL)	217	C
	Time (tL)	60 - 260	sec
	Peak Temperature (TP)	255 +0/-5	C
Time within 5 of actual Peak Temperature (tp)	10 - 30	sec
Ramp-up Rate (Tsmin to Tsmax)	<3	/sec
Ramp-down Rate	<6	/sec

Storage Environment: Temperature = 5 ~40 C, Humidity = 55%25%

2403211444_FUXINSEMI-KMB110S_C5446330.pdf

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