86--136 6733 2386
quality Electronic transistor GOODWORK 2N5551 NPN type designed for medium power amplification and switching factory
quality Electronic transistor GOODWORK 2N5551 NPN type designed for medium power amplification and switching factory

Electronic transistor GOODWORK 2N5551 NPN type designed for medium power amplification and switching

Key Attributes
Model Number: 2N5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
2N5551
Package:
SOT-23
Product Description

Product Overview

The 2N5551 is an NPN transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401, offering reliable performance for various electronic circuits.

Product Attributes

  • Marking Type Number: 2N5551
  • Marking Code: G1
  • Package: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
MAXIMUM RATINGS
CollectorBase Voltage VCBO 180 V
CollectorEmitter Voltage VCEO 160 V
EmitterBase Voltage VEBO 6 V
Collector Current Continuous IC 600 mA
Collector Power Dissipation PC 300 mW
Thermal Resistance From Junction To Ambient RthJA 416 /W
Operation Junction and Storage Temperature Range TJ,Tstg -55~+150
ELECTRICAL CHARACTERISTICS
Collector-base breakdown voltage V(BR)CBO IC = 100uA, IE = 0 180 V
Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 160 V
Emitter-base breakdown voltage V(BR)EBO IE = 10uA, IC = 0 6 V
Collector cut-off current ICBO VCB = 120V, IE = 0 1 nA
Emitter cut-off current IEBO VEB = 4V, IC =0 1 nA
DC current gain hFE1 VCE = 5V, IC =10mA 100 300
DC current gain hFE2 IC = 50mA, IB = 5mA 100 300
DC current gain hFE3 VCE = 5V, IC = 50mA 300
Collector-emitter saturation voltage VCE(sat)1 IC = 10mA, IB = 1mA 0.15 V
Collector-emitter saturation voltage VCE(sat)2 IC = 50mA, IB = 5mA 0.2 V
Base-emitter saturation voltage VBE(sat)1 IC = 10mA, IB = 1mA 0.6 V
Base-emitter saturation voltage VBE(sat)2 IC = 50mA, IB = 5mA 0.8 V
Collector output capacitance Cob VCB = 10V, IE = 0, f=1MHz 1 pF
Transition frequency fT VCE = 10V, IC = 10mA, f=100MHz 50 MHz

hFE Classification

Rank Range
L 100-200
H 200-300

2509161435_GOODWORK-2N5551_C51912414.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance factory
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
quality Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction factory
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
quality Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device factory
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
quality Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification factory
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.