86--136 6733 2386
quality Compact halogen free rectifier FUXINSEMI MURS120T3G FS with 1A current rating and fast recovery time factory
quality Compact halogen free rectifier FUXINSEMI MURS120T3G FS with 1A current rating and fast recovery time factory

Compact halogen free rectifier FUXINSEMI MURS120T3G FS with 1A current rating and fast recovery time

Key Attributes
Model Number: MURS120T3G-FS
Product Custom Attributes
Reverse Leakage Current (Ir):
2uA
Non-Repetitive Peak Forward Surge Current:
40A
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
875mV@1A
Current - Rectified:
1A
Mfr. Part #:
MURS120T3G-FS
Package:
SMB
Product Description

Product Overview

The MURS120T3G-FS is a high-performance rectifier designed for various electronic applications. It features a maximum average forward rectified current of 1A and a maximum repetitive peak reverse voltage of 200V. With a fast switching speed indicated by a typical reverse recovery time of 15 ns, this component is suitable for applications requiring efficient rectification and surge protection. Its compact SMB/DO-214AA package makes it ideal for space-constrained designs. This product is also compliant with Halogen-free standards.

Product Attributes

  • Certifications: Halogen-free Compliant
  • Package Type: SMB/DO-214AA

Technical Specifications

Parameter Symbol Value Units Conditions
Maximum average forward rectified current IO 1.0 A (TJ = 25C unless otherwise noted)
Maximum instantaneous forward voltage VF 0.71 V IF = 1.0 A, TJ = 25C
Maximum instantaneous forward voltage VF 0.875 V IF = 1.0 A, TJ = 125C
Maximum reverse leakage current at rated VR IR 25 A VR = 200 V, TJ = 25C
Typical junction capacitance CJ 15 pF VR = 4.0 VDC, f = 1 MHz (Note 1)
Maximum continuous reverse voltage VR 200 V
Maximum repetitive peak reverse voltage VRRM 200 V
Non-repetitive peak forward surge current (8.3ms single half sine-wave) IFSM 50 A
Maximum RMS voltage VRMS 140 V
Typical thermal resistance junction to ambient RJA 55 to 175 C / W (Note 3) Mounted on FR-4 PCB Copper, minimum recommended pad layout
Typical thermal resistance junction to case RJC 20 C / W (Note 3) Mounted on FR-4 PCB Copper, minimum recommended pad layout
Operating junction temperature range TJ -65 to 175 C
Storage temperature range TSTG -65 to 175 C
Maximum reverse recovery time trr 15 ns IF = 0.5 A, IR = 1 A, Irr = 0.25 A (Note 2)

Models: MURS120T3G, MURS120T3G-FS


2512291556_FUXINSEMI-MURS120T3G-FS_C48031400.pdf

Related Products
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control factory
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
quality Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD factory
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
quality Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor factory
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.