General Purpose PNP Transistor GOODWORK 2N3906 Suitable for Amplification and Switching Applications
Key Attributes
Model Number:
2N3906
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2N3906
Package:
SOT-23
Product Description
Product Overview
The 2N3906 is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features epitaxial planar die construction and is recommended as a complementary type to the NPN transistor MMBT3904. This device offers a range of electrical characteristics suitable for various electronic circuits.
Product Attributes
- Brand: DEMACHEL
- Type: PNP TRANSISTOR
- Package: SOT-23
- Marking Code: 2A
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC =-10uA, IE = 0 | -40 | V | |
| Collector-emitter breakdown voltage | V(BR)CEO | IC =-1 mA, IB = 0 | -40 | V | |
| Emitter-base breakdown voltage | V(BR)EBO | IE =-10uA, IC = 0 | -5 | V | |
| Collector cut-off current | ICBO | VCB =-40V, IE = 0 | -50 | nA | |
| Collector cut-off current | ICEX | VCB =-40V, IE = 0 | -50 | nA | |
| DC current gain | hFE1 | VC =-20V, IC =-10mA, IB = 0 | -100 | ||
| DC current gain | hFE2 | VC =-30V, IC =-10mA, IB = 0 | -300 | ||
| DC current gain | hFE3 | VC =-3V, IC =-10mA, IB = 1mA | 300 | ||
| Collector-emitter saturation voltage | VCE(sat) | IC =-10mA, IB = 1mA | -0.3 | V | |
| Collector-emitter saturation voltage | VCEsat | IC =-50mA, IB =-5mA | -0.95 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC =-10mA, IB = 1mA | -0.95 | V | |
| Base-emitter saturation voltage | VBE(sat) | IC =-50mA, IB =-5mA | -1.2 | V | |
| Delay time | td | VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 1mA | -100 | ns | |
| Rise time | tr | VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 1mA | -35 | ns | |
| Storage time | ts | VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 1mA | -100 | ns | |
| Fall time | tf | VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 1mA | -35 | ns | |
| Transition frequency | fT | VC =-20V, IC =-10mA, f=100MHz | 300 | MHz | |
| Collector-base capacitance | Cob | IE = 0, f=1MHz | 10 | pF | |
| Collector cut-off current | ICEX | VCB =-30V, IE = 0 | -50 | nA | |
| Emitter cut-off current | IEBO | VEB =-5V, IC = 0 | -50 | nA | |
| Collector Dissipation | PC | (Ta=25 unless otherwise noted) | 0.2 | W | |
| Thermal Resistance Junction To Ambient | RthJA | (Ta=25 unless otherwise noted) | 625 | /W | |
| Operation Junction and Storage Temperature Range | TJ,Tstg | (Ta=25 unless otherwise noted) | -55 | +150 |
2506041705_GOODWORK-2N3906_C49023424.pdf
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