Metal Silicon Junction Surface Mount Rectifier FUXINSEMI SS56F with Built In Strain Relief and Loss

Key Attributes
Model Number: SS56F
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
120A
Reverse Leakage Current (Ir):
500uA
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
-
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
700mV@5A
Current - Rectified:
5A
Mfr. Part #:
SS56F
Package:
SMAF
Product Description

Product Overview

The SS56F is a Surface Mount Schottky Barrier Rectifier designed for high-efficiency applications. It features a metal silicon junction with majority carrier conduction, resulting in low power loss and high efficiency. Its JEDEC SMAF molded plastic body with solder-plated terminals ensures excellent solderability per MIL-STD-750, Method 2026. This rectifier is ideal for surface mounted applications, offering built-in strain relief for automated placement and high forward surge current capability. It is compliant with RoHS 2.0 and Halogen-free standards, making it suitable for various electronic designs requiring high temperature soldering performance up to 260C for 10 seconds.

Product Attributes

  • Brand: Fuxin Semiconductor (implied by www.fuxinsemi.com)
  • Model: SS56F
  • Package Type: JEDEC SMAF
  • Material: Metal silicon junction, majority carrier conduction
  • Certifications: RoHS 2.0 Compliant, Halogen-free Compliant, Underwriters Laboratory Flammability Classification 94V-0
  • Mounting Type: Surface Mount
  • Polarity: Color band denotes cathode end
  • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

Technical Specifications

Parameter Symbol Value Unit Conditions
Maximum Repetitive Peak Reverse Voltage VRRM 60 V
Maximum RMS Voltage VRMS 42 V
Maximum DC Blocking Voltage VDC 60 V
Maximum Average Forward Rectified Current I(AV) 5.0 A At TL (see fig.1)
Peak Forward Surge Current IFSM 120.0 A 8.3ms single half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage VF 0.70 V At 5.0A
Maximum DC Reverse Current IR 0.5 mA TA=25C at rated DC blocking voltage
Maximum DC Reverse Current IR 10.0 mA TA=100C at rated DC blocking voltage
Typical Junction Capacitance CJ 360 pF Measured at 1MHz and applied reverse voltage of 4.0V D.C. (NOTE 1)
Typical Thermal Resistance RJA 60 C/W P.C.B. mounted with 2.0x2.0(5.0x5.0cm) copper pad areas (NOTE 2)
Operating Junction Temperature Range TJ -55 to +150 C
Storage Temperature Range TSTG -55 to +150 C
Package Dimensions (SMAF) Length: 0.189-0.173 in. (4.80-4.40 mm), Width: 0.126-0.141 in. (3.20-3.60 mm), Height: 0.094-0.110 in. (2.40-2.80 mm)
Marking Code DH

2411271434_FUXINSEMI-SS56F_C5445746.pdf

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