Power Semiconductor Device FUXINSEMI C2M1000170D Silicon Carbide N Channel Enhancement Mode MOSFET
Key Attributes
Model Number:
C2M1000170D
Product Custom Attributes
Drain To Source Voltage:
1.7kV
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.4Ω
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Pd - Power Dissipation:
69W
Output Capacitance(Coss):
19pF
Input Capacitance(Ciss):
215pF
Gate Charge(Qg):
22nC
Mfr. Part #:
C2M1000170D
Package:
TO-247-3
Product Description
Product Overview
The C2M1000170D is a Silicon Carbide Power MOSFET featuring N-Channel Enhancement Mode. It is designed for high-performance power applications.
Product Attributes
- Brand: Fuxin Semiconductor
- Material: Silicon Carbide
Technical Specifications
| Parameter | Conditions | Value |
| Drain-Source Current, IDS (A) | VDS = 20 V, tp < 200 s, TJ = 25 C | 0 to 16 |
| Drain-Source Current, IDS (A) | VDS = 20 V, tp < 200 s, TJ = -55 C | 0 to 16 |
| Drain-Source Current, IDS (A) | VDS = 20 V, tp < 200 s, TJ = 150 C | 0 to 16 |
| Threshold Voltage, Vth (V) | VGS = VDS, IDS = 0.5 mA | -5 to 5 |
| Gate Charge, QG (nC) | IDS = IGS = 50 mA, VDS = 2 A, TJ = 25 C | 0 to 25 |
| Drain-Source Current, IDS (A) | Tj = -55 C, tp < 200 s, VGS = 10 V | 0 to 16 |
| Drain-Source Current, IDS (A) | Tj = 25 C, tp < 200 s, VGS = 10 V | 0 to 16 |
| Drain-Source Current, IDS (A) | Tj = 150 C, tp < 200 s, VGS = 10 V | 0 to 16 |
| Stored Energy, EOSS (J) | VDS = 1200 V | 0 to 1000 |
| Capacitance (pF) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | Ciss, Coss, Crss (0 to 1000) |
| Capacitance (pF) | TJ = 25 C, VAC = 25 mV, f = 1 MHz | Ciss, Coss, Crss (0 to 100) |
2409302136_FUXINSEMI-C2M1000170D_C22365191.pdf
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