Power Switching P Channel MOSFET FUXINSEMI FS3415K with 2KV ESD Protection and Trench Process Technology
Key Attributes
Model Number:
FS3415K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-
RDS(on):
30mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
116pF@10V
Number:
1 P-Channel
Output Capacitance(Coss):
219pF
Input Capacitance(Ciss):
940pF@10V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
7.2nC@4.5V
Mfr. Part #:
FS3415K
Package:
SOT-23
Product Description
Product Overview
The FS3415K is a P-Channel SMD MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers ESD protection up to 2.0KV (HBM) and is designed for load switching in portable devices and DC/DC converters. This MOSFET provides excellent performance with low on-resistance values at various gate-source voltages.
Product Attributes
- Brand: Fuxinsemi
- Package: SOT-23
- Type: P-Channel SMD MOSFET
- Certifications: ESD Protected Up to 2.0KV (HBM)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS =-20V,VGS = 0V | -1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS =12V, VDS = 0V | 15 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS =VGS, ID | -1 | V | ||
| Drain-Source On-Resistance | RDS(on) | VGS =-4.5V, ID =-4.2A | 48 | 60 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS =-2.5V, ID =-4.0A | 40 | 55 | m | |
| Drain-Source On-Resistance | RDS(on) | VGS =-1.8V, ID =-1.2A | 100 | m | ||
| Continuous Drain Current | ID | (Ta=25) | -4.2 | A | ||
| Pulsed Drain Current | IDM | -23 | A | |||
| Power Dissipation | PD | (Ta=25) | 1.3 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | ~ | +150 | ||
| Input Capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 940 | pF | ||
| Output Capacitance | Coss | VDS =-10V,VGS =0V,f =1MHz | 219 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =-10V,VGS =0V,f =1MHz | 116 | pF | ||
| Total Gate Charge | Qg | VDS =-10V,VGS =-4.5V, ID =-4.2A | 7.2 | nC | ||
| Gate-Source Charge | Qgs | VDS =-10V,VGS =-4.5V, ID =-4.2A | 1.2 | nC | ||
| Gate-Drain Charge | Qg | VDS =-10V,VGS =-4.5V, ID =-4.2A | 1.6 | nC | ||
| Turn-on Delay Time | td(on) | VDD=-10V, VGS =-4.5V, RGEN=3, RL=2.5 | 15 | nS | ||
| Turn-on Rise Time | tr | VDD=-10V, VGS =-4.5V, RGEN=3, RL=2.5 | 63 | nS | ||
| Turn-off Delay Time | td(off) | VDD=-10V, VGS =-4.5V, RGEN=3, RL=2.5 | 21 | nS | ||
| Turn-off Fall Time | tf | VDD=-10V, VGS =-4.5V, RGEN=3, RL=2.5 | 12 | nS | ||
| Diode Forward Current | IS | -4.2 | A | |||
| Diode Forward Voltage | VSD | VGS =0V, IS =-4.2A | -1.2 | V |
2411121146_FUXINSEMI-FS3415K_C784614.pdf
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