Power switching MOSFET FUXINSEMI FS1012ET N Channel SMD type suitable for battery operated systems
Key Attributes
Model Number:
FS1012ET
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
700mA
RDS(on):
620mΩ@2.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Input Capacitance(Ciss):
78pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
-
Mfr. Part #:
FS1012ET
Package:
SOT-523
Product Description
Product Overview
The FS1012ET is an N-Channel SMD MOSFET designed with a high-density cell structure for ultra-low on-resistance. It offers high-side switching capabilities and is built for rugged and reliable performance. This MOSFET is suitable for various battery-operated systems, power supply converter circuits, and load/power switching applications, including cell phones, pagers, drivers, relays, solenoid, lamps, hammers, displays, and memories. It also features ESD protection.
Product Attributes
- Brand: FUXIN
- Origin: China (implied by domain www.fuxinsemi.com)
- Package: SOT-523
- Marking: FS1012ET
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | 0.7 | A | |||
| Pulsed Drain Current | IDM | 2.8 | A | |||
| Power Dissipation | PD | 0.38 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 510 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =8V, VDS = 0V | 5 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.45 | 1.2 | V | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =0.5A | 380 | 620 | m | |
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =0.4A | 160 | m | ||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 78 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 15 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 7 | pF | ||
| Turn-on delay time | td(on) | VDD=10V,VGS=4.5V, ID =0.3A,R GEN=3.3 | 8 | nS | ||
| Turn-on rise time | tr | VDD=10V,VGS=4.5V, ID =0.3A,R GEN=3.3 | 4 | nS | ||
| Turn-off delay time | td(off) | VDD=10V,VGS=4.5V, ID =0.3A,R GEN=3.3 | 28 | nS | ||
| Turn-off fall time | tf | VDD=10V,VGS=4.5V, ID =0.3A,R GEN=3.3 | 1.2 | nS | ||
| Diode Forward voltage | VSD | VGS =0V, IS=0.3A | 1.2 | V | ||
2204061630_FUXINSEMI-FS1012ET_C2984753.pdf
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