Industrial power SCR FUXINSEMI BT151D suitable for AC motor speed regulation and T tool applications
Key Attributes
Model Number:
BT151D
Product Custom Attributes
Holding Current (Ih):
40mA
Current - Gate Trigger(Igt):
10mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
95A@50Hz
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BT151D
Package:
TO-252AB(DPAK)
Product Description
Product Overview
The BT151D Series are standard SCRs from Fuxin Semiconductor, designed for power applications. These SCRs offer high ability to withstand shock loading of large current and provide a high dv/dt rate with strong resistance to electromagnetic interference. They are suitable for applications such as power chargers, T-tools, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: Fuxin Semiconductor
- Series: BT151D
- Package: TO-252AB
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit |
| Repetitive peak off-state voltage | VDRM | 600 / 800 | V | |
| Repetitive peak reverse voltage | VRRM | 600 / 800 | V | |
| RMS on-state current | IT(RMS) | 12 | A | |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 95 | A | |
| I2t value for fusing (tp=10ms) | I2t | 45 | A2s | |
| Critical rate of rise of on-state current (IG =2IGT) | dIT/dt | 50 | A/s | |
| Peak gate current | IGM | 4 | A | |
| Average gate power dissipation | PG(AV) | 1 | W | |
| Junction Temperature | TJ | -40 ~ +125 | ||
| Storage Temperature | TSTG | -40 ~ +150 | ||
| Gate trigger current | IGT | VD =12V, RL= 140 | MAX. 1.3 | mA |
| Gate trigger voltage | VGT | MAX. 1.55 | V | |
| Gate non-trigger voltage | VGD | VD =VDRM, Tj =125 | MIN. 0.2 | V |
| Latching current | IL | IG =1.2IGT | MAX. 50 | mA |
| Holding current | IH | IT = 50mA | MAX. 40 | mA |
| Critical-rate of rise of commutation voltage | dVD/dt | VD=2/3VDRM, Gate Open, Tj =125 | MIN. 200 | V/s |
| Forward "on" voltage | VTM | ITM =16A, tp=380s | MAX. 1.55 | V |
| Repetitive Peak Off-State Current | IDRM | VD =VDRM, Tj=25 | MAX. 5 | A |
| Repetitive Peak Off-State Current | IDRM | VR =VRRM, Tj=125 | MAX. 2 | mA |
| Junction to case thermal resistance | Rth(j-c) | TYP. 1.3 | /W | |
| Junction to ambient thermal resistance | Rth(j-a) | TYP. 70 | /W |
2210311230_FUXINSEMI-BT151D_C967628.pdf
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