16A 600V TRIAC BTB16Q-600BW suitable for inductive loads washing machines and AC motor speed control
Key Attributes
Model Number:
BTB16Q-600BW
Product Custom Attributes
Holding Current (Ih):
-
Current - Gate Trigger(Igt):
-
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
160A@50Hz
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BTB16Q-600BW
Package:
TO-263
Product Description
Product Overview
The BTB16Q Series are 16A, 3-quadrant TRIACs designed for high shock loading and excellent commutation performance, making them ideal for inductive loads. Applications include washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: FS
- Origin: www.fuxinsemi.com
- Package: TO-263AB
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Condition |
| IT(RMS) | RMS on-state current | 16 | A | |
| VDRM / VRRM | Repetitive peak off-state voltage / Repetitive peak reverse voltage | 600 / 800 | V | |
| VTM | Forward "on" voltage | 1.55 | V | ITM =23A, tp=380s |
| ITSM | Non repetitive surge peak on-state current (full cycle, F=50Hz) | 160 | A | |
| I2t | I2t value for fusing (tp=10ms) | 140 | A2s | |
| dIT/dt | Critical rate of rise of on-state current (IG =2IGT) | 50 | A/s | -- |
| IGM | Peak gate current | 4 | A | |
| PG(AV) | Average gate power dissipation | 1 | W | |
| TJ | Junction Temperature | -40 ~ +125 | ||
| TSTG | Storage Temperature | -40 ~ +150 | ||
| IGT | Gate trigger current | 35 / 50 | mA | VD =12V, RL = 33, Tj =25, -- |
| VGT | Gate trigger voltage | 1.3 | V | -- |
| VGD | Gate non-trigger voltage | 0.2 | V | VD =VDRM, Tj =125 |
| IL | latching current | 50 / 70 (-), 60 / 80 () | mA | IG =1.2IGT |
| IH | Holding current | 30 / 50 | mA | IT =500mA |
| dVD/dt | Critical-rate of rise of commutation voltage | 500 / 1000 | V/s | VD=2/3VDRM, Gate Open, Tj =125 |
| IDRM | Repetitive Peak Off-State Current | 5 | A | VD =VDRM, Tj=25 |
| IRRM | Repetitive Peak Reverse Current | 1 | mA | VR =VRRM, Tj=125 |
| Rth(j-c) | Junction to case(AC) | 1.2 | /W | |
| Rth(j-a) | Junction to ambient | 45 | /W |
2112281630_FUXINSEMI-BTB16Q-600BW_C918191.pdf
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