Power Charger SCR 0.8A Sensitive Gate Device FUXINSEMI FSJX008L with High dvdt and EMI Resistance
Key Attributes
Model Number:
FSJX008L
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
800mA
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
8A
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
FSJX008L
Package:
SOT-23-3L
Product Description
Product Overview
The FSJX008L is a 0.8A Sensitive Gate SCR designed for applications requiring high shock loading capability and strong resistance to electromagnetic interference. It offers a high dv/dt rate and is suitable for power chargers, T-tools, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: Fuxin Semiconductor
- Package: SOT-23-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit | Min | Max |
| Repetitive peak off-state voltage | VDRM | 600 | V | |||
| Repetitive peak reverse voltage | VRRM | 600 | V | |||
| RMS on-state current | IT(RMS) | 0.8 | A | |||
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 8 | A | |||
| I2t value for fusing (tp=10ms) | I2t | 0.35 | A2s | |||
| Critical rate of rise of on-state current (IG =2IGT) | dIT/dt | 50 | A/s | |||
| Peak gate current | IGM | 0.2 | A | |||
| Average gate power dissipation | PG(AV) | 0.1 | W | |||
| Junction Temperature | TJ | -40 ~ +125 | ||||
| Storage Temperature | TSTG | -40 ~ +150 | ||||
| Gate trigger current | IGT | VD =12V, IT=10mA, Tj =25 | 10 | A | 200 | |
| Gate trigger voltage | VGT | V | 0.8 | |||
| Gate non-trigger voltage | VGD | VD =1/2VDRM, Tj =110 | 0.2 | - | ||
| Latching current | IL | VD =12V, IG=0.5mA, RGK=1k, Tj =25 | - | mA | 4 | |
| Holding current | IH | - | mA | 5 | ||
| Critical-rate of rise of commutation voltage | dVD/dt | VD=2/3VDRM, Gate Open, Tj =110 | 10 | V/s | ||
| Forward "on" voltage | VTM | ITM =1.2A, tp=380s | - | V | 1.7 | |
| Repetitive Peak Off-State Current | IDRM | VD =VDRM, VR =VRRM, Tj=25 | - | A | 10 | |
| Repetitive Peak Reverse Current | IRRM | Tj=110 | - | mA | 0.1 | |
| Junction to case thermal resistance | Rth(j-c) | TYP. | 75 | /W | ||
| Junction to ambient thermal resistance | Rth(j-a) | TYP. | 150 | /W |
2512291556_FUXINSEMI-FSJX008L_C42371342.pdf
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