Silicon Carbide Diode FUXINSEMI F3C10065A with Low Heat Sink Requirement and High Reliability
Key Attributes
Model Number:
F3C10065A
Product Custom Attributes
Reverse Leakage Current (Ir):
12uA@650V
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.5V@10A
Current - Rectified:
30A
Mfr. Part #:
F3C10065A
Package:
TO-220-2
Product Description
Product Overview
The F3C10065A is a 650-Volt Silicon Carbide Schottky Diode designed for high-frequency operation with zero reverse and forward recovery characteristics. Its temperature-independent switching behavior and extremely fast switching capabilities contribute to higher efficiency and reduced heat sink requirements. This unipolar rectifier is ideal for replacing bipolar rectifiers in demanding applications such as Switch Mode Power Supplies, Power Factor Correction, and Motor Drives, offering parallel operation without thermal runaway.
Product Attributes
- Brand: Fuxin Semiconductor
- Material: Silicon Carbide
- Package Type: TO-220-2 (TO-220AC)
- RoHS Status: Pb e3
Technical Specifications
| Symbol | Parameter | Value | Unit | Test Conditions | Note |
|---|---|---|---|---|---|
| VRRM | Repetitive Peak Reverse Voltage | 650 | V | ||
| VRSM | Surge Peak Reverse Voltage | 650 | V | ||
| VDC | DC Blocking Voltage | 650 | V | ||
| IF | Continuous Forward Current | 30 | A | TC=25C | Fig. 3 |
| 14.5 | A | TC=135C | Fig. 3 | ||
| 10 | A | TC=153C | Fig. 3 | ||
| IFRM | Repetitive Peak Forward Surge Current | 46 | A | TC=25C, tP= 10 ms, Half Sine Wave | Fig. 8 |
| 31 | A | TC=110C, tP= 10 ms, Half Sine Wave | Fig. 8 | ||
| IFSM | Non-Repetitive Peak Forward Surge Current | 90 | A | TC=25C, tp = 10 ms, Half Sine Wave | Fig. 8 |
| 71 | A | TC=110C, tp = 10 ms, Half Sine Wave | Fig. 8 | ||
| IF,Max | Non-Repetitive Peak Forward Surge Current | 860 | A | TC=25C, tP = 10 s, Pulse | Fig. 8 |
| 680 | A | TC=110C, tP = 10 s, Pulse | Fig. 8 | ||
| Ptot | Power Dissipation | 136.5 | W | TC=25C | Fig. 4 |
| 59 | W | TC=110C | Fig. 4 | ||
| TJ , Tstg | Operating Junction and Storage Temperature | -55 to +175 | C | ||
| Mounting Torque | 1 | Nm | M3 Screw | ||
| Mounting Torque | 8.8 | lbf-in | 6-32 Screw | ||
| VF | Forward Voltage | 1.5 - 2.0 | V | IF = 10 A, TJ=25C | Fig. 1 |
| VF | Forward Voltage | 1.8 - 2.4 | V | IF = 10 A, TJ=175C | Fig. 1 |
| IR | Reverse Current | 12 - 60 | A | VR = 650 V, TJ=25C | Fig. 2 |
| 24 - 220 | A | VR = 650 V, TJ=175C | Fig. 2 | ||
| QC | Total Capacitive Charge | 24 | nC | VR = 400 V, IF = 10 A, di/dt = 500 A/s, TJ = 25C | Fig. 5 |
| C | Total Capacitance | 460.5 | pF | VR = 0 V, TJ= 25C, f = 1 MHz | Fig. 6 |
| 44 | pF | VR = 200 V, TJ= 25C, f = 1 MHz | Fig. 6 | ||
| 40 | pF | VR = 400 V, TJ= 25C, f = 1 MHz | Fig. 6 | ||
| EC | Capacitance Stored Energy | 3.6 | J | VR = 400 V | Fig. 7 |
| RJC | Thermal Resistance from Junction to Case | 1.1 | C/W | Fig. 9 |
2103261833_FUXINSEMI-F3C10065A_C784608.pdf
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