GL GL10NP06V D8 N P Channel MOSFET Featuring Low RDS ON and Silicon Material for Power Electronics
Key Attributes
Model Number:
GL10NP06V-D8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+175℃
RDS(on):
18mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF
Output Capacitance(Coss):
95pF
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
960pF
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
GL10NP06V-D8
Package:
SOP-8
Product Description
Product Overview
The GL10NP06V-D8 is a high-performance N+P Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of applications. This RoHS-compliant component is available in a SOP-8 package. Key applications include H-bridges and inverters.
Product Attributes
- Brand: GL
- Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
- Material: Silicon
- Channel Type: N+P Channel
- Package: SOP-8
- Compliance: RoHS standard
Technical Specifications
| Parameter | Symbol | Condition | N-Channel Min | N-Channel Typ | N-Channel Max | P-Channel Min | P-Channel Typ | P-Channel Max | Unit |
|---|---|---|---|---|---|---|---|---|---|
| General Features | |||||||||
| Drain-Source Voltage | VDS | 60 | -60 | V | |||||
| Continuous Drain Current | ID | TC=25 | 10 | -10 | A | ||||
| Continuous Drain Current | ID | TC=100 | 7 | -7 | A | ||||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=10A | 15 | 18 | 60.0 | 75 | m | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=6A | 18 | 25 | 70.0 | 100 | m | ||
| Absolute Maximum Ratings | |||||||||
| Gate-Source Voltage | VGS | TC=25 | 20 | 20 | V | ||||
| Pulsed Drain Current | IDM | TC=25 | 40 | -40 | A | ||||
| Maximum Power Dissipation | PD | TC=25 | 2 | W | |||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | -55 | 175 | ||||
| Thermal Characteristic | |||||||||
| Thermal Resistance, Junction-to-Case | RJC | 75 | /W | ||||||
| N-Channel Electrical Characteristics | |||||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | V | |||||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | -1 | A | ||||
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | 100 | nA | ||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.0 | 2.5 | -1.0 | -3.0 | V | ||
| Forward Transconductance | gFS | VDS=5V, ID=10A | 8 | 6 | S | ||||
| Dynamic Characteristics | |||||||||
| Input Capacitance | Clss | VDS=30V, VGS=0V, F=1.0MHz | 850 | 960 | PF | ||||
| Output Capacitance | Coss | 95 | 86 | PF | |||||
| Reverse Transfer Capacitance | Crss | F=1.0MHz | 51 | 38 | PF | ||||
| Switching Characteristics | |||||||||
| Turn-on Delay Time | td(on) | VDD=30V, RL=2.5, VGS=10V, RG=3 | 6.6 | 9 | nS | ||||
| Turn-on Rise Time | tr | 5.8 | 10 | nS | |||||
| Turn-Off Delay Time | td(off) | 32 | 25 | nS | |||||
| Turn-Off Fall Time | tf | 4 | 11 | nS | |||||
| Total Gate Charge | Qg | VDS=30V, ID=6A, VGS=10V | 18 | 15.8 | nC | ||||
| Gate-Source Charge | Qgs | 4.8 | 3 | nC | |||||
| Gate-Drain Charge | Qgd | 6.8 | 3.5 | nC | |||||
| Drain-Source Diode Characteristics | |||||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=106A | 1.2 | -1.2 | V | ||||
| Diode Forward Current | IS | 6 | -6 | A | |||||
| Reverse Recovery Time | trr | TJ = 25C, IF =10A, di/dt = 100A/s | 58 | 58 | nS | ||||
| Reverse Recovery Charge | Qrr | 60 | 60 | nC | |||||
2410121255_GL-GL10NP06V-D8_C3038121.pdf
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