High Voltage N Channel MOSFET GL GL10N10B4S with 100V Drain Source Voltage and 40W Power Dissipation
Key Attributes
Model Number:
GL10N10B4S
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+175℃
RDS(on):
140mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
14pF
Input Capacitance(Ciss):
255pF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
4nC@10V
Mfr. Part #:
GL10N10B4S
Package:
TO-252
Product Description
Product Overview
The GL10N10B4S is an N-Channel Power MOSFET from GL Silicon, utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. The device is housed in a RoHS-compliant TO-252 package, designed for good heat dissipation.
Product Attributes
- Brand: GL Silicon
- Origin: Wuxi Guang Lei electronic technology co., LTD
- Channel Type: N-Channel
- Package: TO-252
- Compliance: RoHS standard
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
|---|---|---|---|---|
| General Description | ||||
| VDSS | Drain-to-Source Voltage | 100 | V | |
| ID | Continuous Drain Current | 10 | A | |
| IDM | Pulsed Drain Current | 40 | A | |
| VGS | Gate-to-Source Voltage | ±20 | V | |
| PD | Power Dissipation | (Tc= 25) | 40 | W |
| EAS | Single pulse avalanche energy | (a5) | 20 | mJ |
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 175 | ||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 100 | V |
| IDSS | Drain to Source Leakage Current | VDS=100V, VGS= 0V,Ta = 25 | -- | 1.0 A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | -- | 0.1 A |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -- | -0.1 A |
| ON Characteristics (a3) | ||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=10A | -- 110 140 | m |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 1 -- 2.5 | V |
| Dynamic Characteristics (a4) | ||||
| gfs | Forward Transconductance | VDS=5V,ID=5A | -- 7 -- | S |
| Ciss | Input Capacitance | VGS=0V,VDS=50V f=1.0MHz | -- 255 -- | pF |
| Coss | Output Capacitance | -- 14 -- | pF | |
| Crss | Reverse Transfer Capacitance | -- 3 -- | pF | |
| Resistive Switching Characteristics (a4) | ||||
| td(ON) | Turn-on Delay Time | VDD=50V,RL=10 VGS=10V,RG=3 | -- 5 -- | ns |
| tr | Rise Time | -- 3 -- | ns | |
| td(OFF) | Turn-Off Delay Time | -- 16 -- | ns | |
| tf | Fall Time | -- 4 -- | ns | |
| Qg | Total Gate Charge | VDD=50V, ID=3A VGS=10V | -- 4 -- | nC |
| Qgs | Gate to Source Charge | -- 1.6 -- | nC | |
| Qgd | Gate to Drain (Miller)Charge | -- 1 -- | nC | |
| Source-Drain Diode Characteristics | ||||
| IS | Continuous Source Current (Body Diode) (a2) | -- -- 10 | A | |
| VSD | Diode Forward Voltage (a3) | IS=10A,VGS=0V | -- -- 1.2 | V |
| RJC | Junction-to-Case (a2) | 3.8 | /W | |
2409290933_GL-GL10N10B4S_C2886410.pdf
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