High Voltage Silicon N Channel MOSFET GL GL5N50A4 with 30V Gate to Source Voltage and TO 252 Package
Key Attributes
Model Number:
GL5N50A4
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.5pF
Number:
1 N-channel
Output Capacitance(Coss):
53pF
Input Capacitance(Ciss):
610pF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
14.5nC@10V
Mfr. Part #:
GL5N50A4
Package:
TO-252
Product Description
Product Overview
The GL5N50A4 is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and increased efficiency. The device is packaged in a RoHS-compliant TO-252 package.
Product Attributes
- Brand: GL
- Material: Silicon N-Channel Power MOSFET
- Package: TO-252
- Certification: RoHS standard
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
|---|---|---|---|---|
| VDSS | Drain-to-Source Voltage | 500 | V | |
| ID | Continuous Drain Current | (Tc=25) | 5 | A |
| ID | Continuous Drain Current | (TC=100 C) | 3.1 | A |
| IDMa1 | Pulsed Drain Current | 20 | A | |
| VGS | Gate-to-Source Voltage | 30 | V | |
| EAsa2 | Single Pulse Avalanche Energy | 260 | mJ | |
| dv/dta3 | Peak Diode Recovery dv/dt | 5.0 | V/ns | |
| PD | Power Dissipation | 75 | W | |
| Derating Factor above 25C | 0.6 | W/ | ||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 150 | ||
| TL | Maximum Temperature for Soldering | 300 | ||
| RJC | Thermal Resistance, Junction-to-Case | 1.67 | / W | |
| RJA | Thermal Resistance, Junction-to-Ambient | 100 | / W | |
| VDSS | Drain to Source Breakdown Voltage | VGS=0V,ID=250A | 500 | V |
| BVDSS/TJ | Bvdss Temperature Coefficient | ID=250uA,Reference25 | 0.6 | V/ |
| IDSS | Drain to Source Leakage Current | VDS=500V, VGS=0V,Ta=25 | 1.0 | A |
| IDSS | Drain to Source Leakage Current | VDS=400V, VGS=0V,Ta=125 | 100 | A |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -100 | nA |
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=2.5A | 1.2 | |
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=2.5A | 1.5 | |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 2.0 | V |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 4.0 | V |
| gfs | Forward Transconductance | VDS=15V,ID=2.5A | 4.0 | S |
| Ciss | Input Capacitance | VGS=0V VDS=25V f=1.0MHz | 610 | pF |
| Coss | Output Capacitance | 53 | pF | |
| Crss | Reverse Transfer Capacitance | 3.5 | pF | |
| td(ON) | Turn-on Delay Time | ID=5A,VDD=250V VGS=10V,Rg=10 | 14 | ns |
| tr | Rise Time | 16 | ns | |
| td(OFF) | Turn-Off Delay Time | 32 | ns | |
| tf | Fall Time | 11 | ns | |
| Qg | Total Gate Charge | ID=5A,VDD=250V VGS=10V | 14.5 | nC |
| Qgs | Gate to Source Charge | 3 | nC | |
| Qgd | Gate to Drain (Miller)Charge | 6.5 | nC | |
| ISD | Continuous Source Current (Body Diode) | 5 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | 20 | A | |
| VSD | Diode Forward Voltage | IS=5A,VGS=0V | 1.5 | V |
| trr | Reverse Recovery Time | IS=5A,Tj=25 dIF/dt=100A/s,VGS=0V | 310 | ns |
| Qrr | Reverse Recovery Charge | 1300 | nC |
2410121611_GL-GL5N50A4_C2980990.pdf
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