Power Management N Channel SMD MOSFET FUXINSEMI FS2302A Featuring Advanced Trench Process Technology
Key Attributes
Model Number:
FS2302A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.6A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
85mΩ@4.5V,2.6A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
29pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
280pF@10V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
2.9nC@4.5V
Mfr. Part #:
FS2302A
Package:
SOT-23
Product Description
Product Overview
The FS2302A is an N-Channel SMD MOSFET featuring an advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for load switching in portable devices and DC/DC converters, offering efficient power management.
Product Attributes
- Brand: Fuxin Semiconductor
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | 2.6 | A | |||
| Pulsed Drain Current | IDM | 10 | A | |||
| Power Dissipation | PD | 1.2 | W | |||
| Junction Temperature | TJ | -55 | +150 | |||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =16V,VGS = 0V | 1.0 | A | ||
| Gate-body leakage current | IGSS | VGS =8V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.4 | 1.5 | V | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =2.6A | 75 | 85 | m | |
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =2A | 105 | 120 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 280 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 46 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 29 | pF | ||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V, ID =2.6A | 2.9 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V, ID =2.6A | 0.4 | nC | ||
| Gate-Drain Charge | Qg d | VDS =10V,VGS =4.5V, ID =2.6A | 0.6 | nC | ||
| Turn-on delay time | td(on) | VDD=10V, VGS =4.5V, RGEN=3, RL=1.5 | 13 | nS | ||
| Turn-on rise time | tr | VDD=10V, VGS =4.5V, RGEN=3, RL=1.5 | 54 | nS | ||
| Turn-off delay time | td(off) | VDD=10V, VGS =4.5V, RGEN=3, RL=1.5 | 18 | nS | ||
| Turn-off fall time | tf | VDD=10V, VGS =4.5V, RGEN=3, RL=1.5 | 11 | nS | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Current | IS | 2.6 | A | |||
| Diode Forward voltage | VSD | VGS =0V, IS=2.6A | 1.2 | V | ||
2410010231_FUXINSEMI-FS2302A_C784616.pdf
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