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quality Dual Transistor Complementary Pair Featuring GOODWORK MMDT3946DW NPN and PNP Types for Amplification factory
quality Dual Transistor Complementary Pair Featuring GOODWORK MMDT3946DW NPN and PNP Types for Amplification factory

Dual Transistor Complementary Pair Featuring GOODWORK MMDT3946DW NPN and PNP Types for Amplification

Key Attributes
Model Number: MMDT3946DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
200mW
Type:
NPN+PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMDT3946DW
Package:
SOT-363
Product Description

MMDT3946DW DUAL TRANSISTOR (NPN+PNP)

Complementary Pair, One 3904-Type NPN, One 3906-Type PNP. Epitaxial Planar Die Construction. Ideal for Low Power Amplification and Switching.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Parameter NPN (MMBT3904-Type) PNP (MMBT3906-Type) Units
Collector-Base Voltage (V(BR)CBO) 60 -40 V
Collector-Emitter Voltage (V(BR)CEO) 40 -40 V
Emitter-Base Voltage (V(BR)EBO) 5 -5 V
Collector Current - Continuous 0.2 -0.2 A
Collector Power Dissipation 0.2 0.2 W
Junction Temperature 150 150 C
Storage Temperature -55-150 -55-150 C
Collector Cutoff Current (ICBO) VCB=30V, IE=0 0.05 -0.05 A
Collector Cutoff Current (ICEO) VCE=30V, IB=0 0.5 N/A A
Emitter Cutoff Current (IEBO) VEB=5V, IC=0 N/A -0.05 A
DC Current Gain (hFE) VCE=1V, IC=1mA 70 80
DC Current Gain (hFE) VCE=1V, IC=10mA 100 100
DC Current Gain (hFE) VCE=1V, IC=50mA 300 300
DC Current Gain (hFE) VCE=1V, IC=100mA 60 60
Collector-Emitter Saturation Voltage (VCE(sat)1) IC=10mA, IB=1mA 0.2 -0.25 V
Collector-Emitter Saturation Voltage (VCE(sat)2) IC=50mA, IB=5mA 0.3 -0.4 V
Base-Emitter Saturation Voltage (VBE(sat)1) IC=10mA, IB=1mA 0.65 - 0.85 -0.65 - -0.85 V
Base-Emitter Saturation Voltage (VBE(sat)2) IC=50mA, IB=5mA 0.95 -0.95 V
Transition Frequency (fT) VCE=20V,IC=20mA, f=100MHz 300 250 MHz
Noise Figure (NF) VCE=5V,Ic=0.1mA, f=1KHz,Rg=1K 5 4 dB
Output Capacitance (Cob) VCB=5V,IE=0,f=1MHz 4 4.5 pF
Turn-on Delay Time (td) VCC=3V, VBE=0.5V IC=10mA , IB1=- IB2=1mA 35 35 nS
Rise Time (tr) VCC=3V, VBE=0.5V IC=10mA , IB1=- IB2=1mA 35 35 nS
Storage Time (tS) VCC=3V, IC=10mA IB1=- IB2=1mA 200 225 nS
Fall Time (tf) VCC=3V, IC=10mA IB1=- IB2=1mA 50 75 nS

2410010333_GOODWORK-MMDT3946DW_C22470864.pdf

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