Power management transistor P channel MOSFET FUXINSEMI AO3407A for switching and control electronics
Key Attributes
Model Number:
AO3407A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
RDS(on):
60mΩ@10V,4.1A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.4V
Reverse Transfer Capacitance (Crss@Vds):
74pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
580pF@15V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
6.8nC
Mfr. Part #:
AO3407A
Package:
SOT-23
Product Description
Product Overview
The AO3407A is a P-channel enhancement mode MOSFET designed for various applications. It offers efficient performance and is suitable for power management solutions.
Product Attributes
- Brand: AO
- Model: AO3407A
Technical Specifications
| Parameter | Value |
| VDS | -30V |
| ID | -5.7A |
| RDS(ON) | 30m @ VGS = -10V |
| RDS(ON) | 35m @ VGS = -4.5V |
| VGS(th) | -1V @ ID = -250µA |
| Qg | 12nC @ VGS = -10V |
| ID @ VGS = -10V, VDS = -10V | -5.7A |
| ID @ VGS = -4.5V, VDS = -10V | -4.8A |
| Ciss | 450pF |
| Coss | 80pF |
| Crss | 20pF |
| Eon | 12nC |
| Eoff | 20nC |
| TJ | 150°C |
| TSTG | -55°C to +150°C |
| RthJA | 100°C/W |
| RthJC | 20°C/W |
2307121104_FUXINSEMI-AO3407A_C7436553.pdf
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