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quality NPN Silicon Epitaxial Planar Transistor GOODWORK BC847BW for General Purpose Switching Applications factory
quality NPN Silicon Epitaxial Planar Transistor GOODWORK BC847BW for General Purpose Switching Applications factory

NPN Silicon Epitaxial Planar Transistor GOODWORK BC847BW for General Purpose Switching Applications

Key Attributes
Model Number: BC847BW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BC847BW
Package:
SOT-323
Product Description

Product Overview

NPN Silicon Epitaxial Planar Transistor designed for general purpose and switching applications. This transistor offers reliable performance and is suitable for a wide range of electronic circuits.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Silicon Epitaxial Planar
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

Parameter Symbol BC846W BC847W BC848W Unit Min. Max.
Absolute Maximum Ratings (Ta = 25 OC)
Collector Base Voltage VCBO 80 50 30 V
Collector Emitter Voltage VCEO 65 45 30 V
Emitter Base Voltage VEBO 6 6 5 V
Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 OC
Storage Temperature Range Tstg - 55 to + 150 OC
Characteristics at Ta = 25 OC
DC Current Gain at VCE = 5 V, IC = 2 mA hFE 110 200 420 -
DC Current Gain at VCE = 5 V, IC = 2 mA hFE 220 450 800 -
Collector Base Voltage at IC = 10 A VCBO 80 50 30 V
Collector Emitter Voltage at IC = 10 mA VCEO 65 45 30 V
Emitter Base Voltage at IE = 1 A VEBO 6 6 5 V
Collector Base Cutoff Current at VCB = 30 V ICBO 15 nA
Emitter Base Cutoff Current at VEB = 5 V IEBO 100 nA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA VCE(sat) 0.25 V
Collector Emitter Saturation Voltage at IC = 100 mA, IB = 5 mA VCE(sat) 0.6 V
Base Emitter Voltage at VCE = 5 V, IC = 2 mA VBE 0.58 - - V
Base Emitter Voltage at VCE = 5 V, IC = 10 mA VBE - 0.7 0.77 V
Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz fT 100 MHz
Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz Cob 4.5 pF

2508261540_GOODWORK-BC847BW_C50581516.pdf

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