Silicon controlled rectifier FUXINSEMI 2P4M suitable for ac motor speed regulation and power chargers

Key Attributes
Model Number: 2P4M
Product Custom Attributes
Holding Current (Ih):
4mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
2A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
20A@50Hz
SCR Type:
-
Operating Temperature:
-
Gate Trigger Voltage (Vgt):
-
Mfr. Part #:
2P4M
Package:
TO-92
Product Description

Product Overview

The 2P4M is a sensitive gate SCR (Silicon Controlled Rectifier) from Fuxinsemi, designed for applications requiring high shock loading capability and strong resistance to electromagnetic interference due to its high dv/dt rate. It is suitable for various power control applications including power chargers, T-tools, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

  • Brand: Fuxinsemi
  • Model: 2P4M
  • Package: TO-92
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionValueUnitMinMax
Repetitive peak off-state voltageVDRM600V
Repetitive peak reverse voltageVRRM600V
RMS on-state currentIT(RMS)3A
Non repetitive surge peak on-state current (full cycle, F=50Hz)ITSM20A
I2t value for fusing (tp=10ms)I2t2A2s
Critical rate of rise of on-state current (IG =2IGT)dIT/dt50A/s
Peak gate currentIGM0.2A
Average gate power dissipationPG(AV)0.1W
Junction TemperatureTJ-40 ~ +110
Storage TemperatureTSTG-40 ~ +150
Gate trigger currentIGTVD =12V, IT=10mA, Tj =25A10200
Gate trigger voltageVGTV0.8
Gate non-trigger voltageVGDVD =1/2VDRM, Tj =110V0.2
Latching currentILVD =12V, IG=0.5mA, RGK=1k, Tj =25mA3
Holding currentIHmA4
Critical-rate of rise of commutation voltagedVD/dtVD=2/3VDRM, Gate Open, Tj =110V/s10
Forward "on" voltageVTMITM =4A, tp=380sV1.55
Repetitive Peak Off-State CurrentIDRMVD =VDRM, Tj=25A5
Repetitive Peak Reverse CurrentIRRMVR =VRRM, Tj=110mA0.1
Junction to case thermal resistanceRth(j-c)TYP.60/W
Junction to ambient thermal resistanceRth(j-a)TYP.150/W

2112281630_FUXINSEMI-2P4M_C2894302.pdf

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