Silicon controlled rectifier FUXINSEMI 2P4M suitable for ac motor speed regulation and power chargers
Product Overview
The 2P4M is a sensitive gate SCR (Silicon Controlled Rectifier) from Fuxinsemi, designed for applications requiring high shock loading capability and strong resistance to electromagnetic interference due to its high dv/dt rate. It is suitable for various power control applications including power chargers, T-tools, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: Fuxinsemi
- Model: 2P4M
- Package: TO-92
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Value | Unit | Min | Max |
| Repetitive peak off-state voltage | VDRM | 600 | V | |||
| Repetitive peak reverse voltage | VRRM | 600 | V | |||
| RMS on-state current | IT(RMS) | 3 | A | |||
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 20 | A | |||
| I2t value for fusing (tp=10ms) | I2t | 2 | A2s | |||
| Critical rate of rise of on-state current (IG =2IGT) | dIT/dt | 50 | A/s | |||
| Peak gate current | IGM | 0.2 | A | |||
| Average gate power dissipation | PG(AV) | 0.1 | W | |||
| Junction Temperature | TJ | -40 ~ +110 | ||||
| Storage Temperature | TSTG | -40 ~ +150 | ||||
| Gate trigger current | IGT | VD =12V, IT=10mA, Tj =25 | A | 10 | 200 | |
| Gate trigger voltage | VGT | V | 0.8 | |||
| Gate non-trigger voltage | VGD | VD =1/2VDRM, Tj =110 | V | 0.2 | ||
| Latching current | IL | VD =12V, IG=0.5mA, RGK=1k, Tj =25 | mA | 3 | ||
| Holding current | IH | mA | 4 | |||
| Critical-rate of rise of commutation voltage | dVD/dt | VD=2/3VDRM, Gate Open, Tj =110 | V/s | 10 | ||
| Forward "on" voltage | VTM | ITM =4A, tp=380s | V | 1.55 | ||
| Repetitive Peak Off-State Current | IDRM | VD =VDRM, Tj=25 | A | 5 | ||
| Repetitive Peak Reverse Current | IRRM | VR =VRRM, Tj=110 | mA | 0.1 | ||
| Junction to case thermal resistance | Rth(j-c) | TYP. | 60 | /W | ||
| Junction to ambient thermal resistance | Rth(j-a) | TYP. | 150 | /W |
2112281630_FUXINSEMI-2P4M_C2894302.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.