P Channel MOSFET FUXINSEMI FS2301 optimized for portable device power switching and DC DC converters
Key Attributes
Model Number:
FS2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.4A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
120mΩ@4.5V,2.4A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
105pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
500pF@10V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
8.6nC@4.5V
Mfr. Part #:
FS2301
Package:
SOT-23
Product Description
Product Overview
The FS2301 is a P-Channel SMD MOSFET utilizing advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: FUXIN
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | -2.4 | A | |||
| Pulsed Drain Current | IDM | -10 | A | |||
| Power Dissipation | PD | 1.2 | W | |||
| Junction Temperature | TJ | -55 | +150 | |||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -19 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-16V,VGS = 0V | -1 | A | ||
| Gate-body leakage current | IGSS | VGS =8V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.4 | -1.5 | V | |
| Drain-source on-resistance | RDS(on) | VGS =-2.5V, ID =-2.0A | 120 | 140 | m | |
| VGS =-4.5V, ID =-2.4A | 180 | 200 | m | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 500 | pF | ||
| Output Capacitance | Coss | VDS =-10V,VGS =0V,f =1MHz | 120 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =-10V,VGS =0V,f =1MHz | 105 | pF | ||
| Total Gate Charge | Qg | VDD=-10V, VGS =-4.5V,ID=-1A, RGEN=2.5 | 8.6 | nC | ||
| Gate-Source Charge | Qgs | VDD=-10V, VGS =-4.5V,ID=-1A, RGEN=2.5 | 1.5 | nC | ||
| Gate-Drain Charge | Qg | VDD=-10V, VGS =-4.5V,ID=-1A, RGEN=2.5 | 2.6 | nC | ||
| Turn-on delay time | td(on) | VDS =-10V,VGS =-4.5V, ID =-2.8A | 10 | nS | ||
| Turn-on rise time | tr | VDS =-10V,VGS =-4.5V, ID =-2.8A | 18 | nS | ||
| Turn-off delay time | td(off) | VDS =-10V,VGS =-4.5V, ID =-2.8A | 55 | nS | ||
| Turn-off fall time | tf | VDS =-10V,VGS =-4.5V, ID =-2.8A | nS | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Current | IS | -2.4 | A | |||
| Diode Forward voltage | VSD | VGS =0V, IS=-2.4A | -1.2 | V | ||
2410010232_FUXINSEMI-FS2301_C908264.pdf
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