Load Switching N Channel MOSFET FUXINSEMI FS2312 with High Density Cell Design and Low On Resistance
Key Attributes
Model Number:
FS2312
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.8A
RDS(on):
18mΩ@4.5V;22mΩ@2.5V;39mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
75pF@10V
Number:
-
Output Capacitance(Coss):
165pF
Input Capacitance(Ciss):
900pF@10V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
9.2nC@4.5V
Mfr. Part #:
FS2312
Package:
SOT-23(TO-236)
Product Description
Product Overview
The FS2312 is an N-Channel SMD MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: Fuxin Semiconductor
- Origin: China (implied by website domain)
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | ±10 | V | |||
| Continuous Drain Current | ID | 6.8 | A | |||
| Pulsed Drain Current | IDM | 27 | A | |||
| Power Dissipation | PD | Ta=25 | 1.2 | W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | ~ | +150 | ||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±10V, VDS = 0V | ±100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250µA | 0.45 | 1.0 | V | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =6.8A | 18 | mΩ | ||
| VGS =2.5V, ID =3.0A | 22 | |||||
| VGS =1.8V, ID =2.5A | 39 | |||||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 900 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 165 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 75 | pF | ||
| Total Gate Charge | Qg | VDS =10V,VGS =4.5V, ID =6.8A | 9.2 | nC | ||
| Gate-Source Charge | Qgs | VDS =10V,VGS =4.5V, ID =6.8A | 1.7 | nC | ||
| Gate-Drain Charge | Qg | VDS =10V,VGS =4.5V, ID =6.8A | 2.9 | nC | ||
| Turn-on delay time | td(on) | VDD=10V, VGS =4.5V, RGEN=3Ω, RL=1.5Ω | 12 | nS | ||
| Turn-on rise time | tr | VDD=10V, VGS =4.5V, RGEN=3Ω, RL=1.5Ω | 52 | nS | ||
| Turn-off delay time | td(off) | VDD=10V, VGS =4.5V, RGEN=3Ω, RL=1.5Ω | 17 | nS | ||
| Turn-off fall time | tf | VDD=10V, VGS =4.5V, RGEN=3Ω, RL=1.5Ω | 10 | nS | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Current | IS | 6.8 | A | |||
| Diode Forward voltage | VSD | VGS =0V, IS=6.8A | 1.2 | V | ||
2410121503_FUXINSEMI-FS2312_C784613.pdf
Related Products
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
