High Current Capability NPN Transistor PBSS4140T GK for LCD Backlighting and Battery Powered Devices
Key Attributes
Model Number:
PBSS4140T-GK
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-65℃~+150℃@(Tj)
Mfr. Part #:
PBSS4140T-GK
Package:
SOT-23
Product Description
PBSS4140T NPN Transistor
The PBSS4140T is an NPN transistor designed for general purpose switching and muting applications. It offers low collector-emitter saturation voltage, high current capabilities, and improved device reliability due to reduced heat generation. Ideal for LCD backlighting, supply line switching circuits, and battery-driven equipment such as mobile phones, video cameras, and hand-held devices.
Product Attributes
- Brand: DEMACHEL
- Marking: ZT
Technical Specifications
| Parameter | Symbol | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 OC) | |||||
| Collector Base Voltage | VCBO | V | 40 | ||
| Collector Emitter Voltage | VCEO | V | 30 | ||
| Emitter Base Voltage | VEBO | V | 5 | ||
| Collector Current (DC) | IC | A | 1 | ||
| Peak Collector Current | ICM | A | 2 | ||
| Peak Base Current | IBM | A | 1 | ||
| Total Power Dissipation (Tamb≤25OC) | Ptot | mW | 200 | ||
| Junction Temperature | Tj | OC | 150 | ||
| Storage Temperature Range | TS | OC | -65 | +150 | |
| Operating Ambient Temperature | Tamb | OC | -65 | +150 | |
| Characteristics (at Tamb=25 OC) | |||||
| DC Current Gain (at VCE=5V, IC=1mA) | hFE | 300 | 900 | ||
| DC Current Gain (at VCE=5V, IC=500mA) | hFE | 200 | |||
| DC Current Gain (at VCE=5V, IC=1A) | hFE | ||||
| Collector-Base Cutoff Current (at VCB=40V) | ICBO | nA | 100 | ||
| Collector-Base Cutoff Current (at VCB=40V,Tamb=150 OC) | ICBO | µA | 50 | ||
| Collector-Emitter Cutoff Current (at VCE=30V) | ICEO | nA | 100 | ||
| Emitter-Base Cutoff Current (at VEB=5V) | IEBO | nA | 100 | ||
| Collector-Emitter Saturation Voltage (at IC=100mA, IB=1mA) | VCE(sat) | mV | 200 | ||
| Collector-Emitter Saturation Voltage (at IC=500mA, IB=50mA) | VCE(sat) | mV | 250 | ||
| Collector-Emitter Saturation Voltage (at IC=1A, IB=100mA) | VCE(sat) | mV | 500 | ||
| Base-Emitter Saturation Voltage (at IC=1A, IB=100mA) | VBE(sat) | V | 1.2 | ||
| Base-Emitter Turn-on Voltage (at VCE=5V, IC=1A) | VBE(on) | V | 1.1 | ||
| Transition Frequency (at VCE=10V, IC=50mA,f=100MHz) | fT | MHz | 150 | ||
| Collector Capacitance (at VCB=10V, f=1MHz) | CC | pF | 10 | ||
2509161435_GOODWORK-PBSS4140T-GK_C51912413.pdf
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