FUXINSEMI BTB16 800B 16 Amp 800 Volt Triac Ideal for Solid State Relays and Inductive Load Applications
Key Attributes
Model Number:
BTB16-800B
Product Custom Attributes
Holding Current (Ih):
50mA
Current - Gate Trigger(Igt):
-
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
135A@50Hz
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BTB16-800B
Package:
TO-220B
Product Description
Product Overview
The BTB16 Series are 16A, 4-quadrant TRIACs designed with high ability to withstand shock loading of large currents and excellent commutation performance. These TRIACs are especially recommended for use with inductive loads. Applications include washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: Fuxin Semiconductor (FS)
- Package: TO-220B
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
| Repetitive peak off-state voltage | VDRM | 600 / 800 | V | |
| Repetitive peak reverse voltage | VRRM | 600 / 800 | V | |
| RMS on-state current | IT(RMS) | 16 | A | |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 135 | A | |
| I2t value for fusing (tp=10ms) | I2t | 100 | A2s | |
| Critical rate of rise of on-state current (IG =2IGT) | dIT/dt | 50 | A/s | -- |
| 10 | A/s | |||
| Peak gate current | IGM | 4 | A | |
| Average gate power dissipation | PG(AV) | 1 | W | |
| Junction Temperature | TJ | -40 ~ +125 | ||
| Storage Temperature | TSTG | -40 ~ +150 | ||
| Gate trigger current | IGT | 25 (C) / 50 (B) | mA | VD =12V, RL = 33, Tj =25, -- |
| 60 (C) / 100 (B) | mA | VD =12V, RL = 33, Tj =25, | ||
| Gate trigger voltage | VGT | 1.3 | V | --- |
| Gate non-trigger voltage | VGD | 0.2 | V | VD =VDRM, Tj =125 |
| Latching current | IL | <40 (C) / <60 (B) | mA | IG =1.2IGT, -- |
| <80 (C) / <120 (B) | mA | IG =1.2IGT, | ||
| Holding current | IH | <25 (C) / <50 (B) | mA | IT =500mA |
| Critical-rate of rise of commutation voltage | dVD/dt | 200 (C) / 400 (B) | V/s | VD=2/3VDRM, Gate Open, Tj =125 |
| Forward "on" voltage | VTM | 1.55 | V | ITM =20A, tp=380s |
| Repetitive Peak Off-State Current | IDRM | 10 | A | VD =VDRM, Tj=25 |
| Repetitive Peak Reverse Current | IRRM | 1 | mA | VR =VRRM, Tj=125 |
| Thermal resistance (Junction to case, AC) | Rth(j-c) | 1.2 | /W | |
| Thermal resistance (Junction to ambient) | Rth(j-a) | 60 | /W |
2409272301_FUXINSEMI-BTB16-800B_C880905.pdf
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