Power Switching P Channel MOSFET GL GL9Z24A8 Featuring Low Rdson and RoHS Compliant TO 220AB Package
Key Attributes
Model Number:
GL9Z24A8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
15A
RDS(on):
70mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
110pF
Output Capacitance(Coss):
140pF
Input Capacitance(Ciss):
1.45nF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
GL9Z24A8
Package:
TO-220AB-3
Product Description
Product Overview
The GL9Z24A8 is a P-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. Designed for a wide variety of applications, it offers fast switching, low gate charge, low Rdson, low reverse transfer capacitances, and 100% single pulse avalanche energy testing. This MOSFET is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. It is supplied in a RoHS-compliant TO-220AB package.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
- Product Type: P-Channel Power MOSFET
- Package Type: TO-220AB
- Certifications: RoHS compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
|---|---|---|---|---|
| Absolute Maximum Ratings (Tc= 25 unless otherwise specified) | ||||
| VDSS | Drain-to-Source Voltage | -60 | V | |
| ID | Continuous Drain Current | -15 | A | |
| ID | Continuous Drain Current | TC = 100 C | -10.5 | A |
| IDMa1 | Pulsed Drain Current | -60 | A | |
| VGS | Gate-to-Source Voltage | 20 | V | |
| dv/dta3 | Peak Diode Recovery dv/dt | 5.0 | V/ns | |
| PD | Power Dissipation | 45 | W | |
| TJ, Tstg | Operating Junction and Storage Temperature Range | -55 to 150 | ||
| TL | Maximum Temperature for Soldering | 300 | ||
| VDSS | -60 | V | ||
| ID | -15 | A | ||
| PD | 45 | W | ||
| RDS(ON) | 55 | m | ||
| Electrical Characteristics (Tc=25 unless otherwise specified) | ||||
| OFF Characteristics | ||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=-250A | -60 | V |
| BVDSS/TJ | Bvdss Temperature Coefficient | ID=-250uA, Reference 25 | 0.15 | V/ |
| IDSS | Drain to Source Leakage Current | VDS=-60,VGS= 0V,Ta=25 | -1 | A |
| IDSS | VDS=-48V,VGS= 0V,Ta=125 | -250 | A | |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | 1 | A |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -1 | A |
| ON Characteristics | ||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=-10V,ID=-7.5.0A | 55 - 70 | m |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=-250A | -3.0 -1.6 -1.0 | V |
| Dynamic Characteristics | ||||
| gfs | Forward Transconductance | VDS=-10V,ID=-7.5A | 14 | S |
| Ciss | Input Capacitance | VGS=0V,VDS=-25V f=1.0MHz | 1450 | pF |
| Coss | Output Capacitance | 140 | pF | |
| Crss | Reverse Transfer Capacitance | 110 | pF | |
| Resistive Switching Characteristics | ||||
| td(ON) | Turn-on Delay Time | RL=-1.5 ,VDD=-30V VGS=-10V,RG=1.5 | 7 | ns |
| tr | Rise Time | 8 | ns | |
| td(OFF) | Turn-Off Delay Time | 65 | ns | |
| tf | Fall Time | 30 | ns | |
| Qg | Total Gate Charge | ID=-7.5A,VDD =-30V VGS=-10V | 25 | nC |
| Qgs | Gate to Source Charge | 4.5 | nC | |
| Qgd | Gate to Drain (Miller)Charge | 7 | nC | |
| Source-Drain Diode Characteristics | ||||
| IS | Continuous Source Current (Body Diode) | -15 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | -60 | A | |
| VSD | Diode Forward Voltage | IS=-15A,VGS=0V | 1.5 | V |
| trr | Reverse Recovery Time | IS=-15A,Tj=25 dIF/dt=100A/us,VGS=0V | 45 | ns |
| Qrr | Reverse Recovery Charge | Pulse width tp380s,2% | 88 | nC |
| RJC | Junction-to-Case | 2.8 | /W | |
| RJA | Junction-to-Ambient | 62 | /W | |
2108251430_GL-GL9Z24A8_C2886423.pdf
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