Power MOSFET GL GL50N03A4 Featuring Low RDS ON and High Frequency Capability in TO-252 Package Design
Key Attributes
Model Number:
GL50N03A4
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
11mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 N-channel
Output Capacitance(Coss):
240pF
Pd - Power Dissipation:
60W
Input Capacitance(Ciss):
1.8nF
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
GL50N03A4
Package:
TO-252-2
Product Description
Product Overview
The GL50N03A4 is a GL Silicon N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide variety of applications. This MOSFET is designed for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. It is housed in a TO-252 package that complies with RoHS standards, ensuring good heat dissipation.
Product Attributes
- Brand: GL Silicon
- Origin: Wuxi Guang Lei electronic technology co., LTD
- Package Type: TO-252
- Standard Compliance: RoHS
Technical Specifications
| Parameter | Conditions | Rating | Units | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Absolute Ratings (Tc= 25 unless otherwise specified) | ||||||
| VDSS | Drain-to-Source Voltage | 30 | V | |||
| ID | Continuous Drain Current | 50 | A | |||
| IDM | Pulsed Drain Current | 200 | A | |||
| VGS | Gate-to-Source Voltage | 20 | V | |||
| PD | Power Dissipation | 60 | W | |||
| EAS | Single pulse avalanche energya5 | 70 | mJ | |||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 to 175 | ||||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||||
| OFF Characteristics | ||||||
| VDSS | Drain to Source Breakdown Voltage (VGS=0V, ID=250A) | 30 | V | |||
| IDSS | Drain to Source Leakage Current (VDS=30V, VGS= 0V, Ta = 25) | A | 1.0 | |||
| IGSS(F) | Gate to Source Forward Leakage (VGS=+20V) | A | 0.1 | |||
| IGSS(R) | Gate to Source Reverse Leakage (VGS=-20V) | A | -0.1 | |||
| ON Characteristicsa3 | ||||||
| RDS(ON) | Drain-to-Source On-Resistance (VGS=10V, ID=25A) | m | 8.0 | 11 | ||
| VGS(TH) | Gate Threshold Voltage (VDS=VGS, ID=250A) | V | 1.0 | 1.6 | 3.0 | |
| Dynamic Characteristicsa4 | ||||||
| gfs | Forward Transconductance (VDS=5V, ID=25A) | 15 | S | |||
| Ciss | Input Capacitance (VGS=0V, VDS=15V, f=1.0MHz) | pF | 1800 | |||
| Coss | Output Capacitance | pF | 240 | |||
| Crss | Reverse Transfer Capacitance | pF | 180 | |||
| Resistive Switching Characteristicsa4 | ||||||
| td(ON) | Turn-on Delay Time (VDD=10V, ID=25A, VGS=10V, RG=1.8) | ns | 10 | |||
| tr | Rise Time | ns | 9 | |||
| td(OFF) | Turn-Off Delay Time | ns | 30 | |||
| tf | Fall Time | ns | 6 | |||
| Qg | Total Gate Charge (VDD=10V, ID=25A, VGS=10V) | nC | 23 | |||
| Qgs | Gate to Source Charge | nC | 8 | |||
| Qgd | Gate to Drain (Miller)Charge | nC | 4.5 | |||
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current a2(Body Diode) | A | 50 | |||
| VSD | Diode Forward Voltagea3 (IS=50A, VGS=0V) | V | 1.2 | |||
| Thermal Characteristics | ||||||
| RJC | Junction-to-Casea2 | /W | 2.5 | |||
Notes:
a1: Repetitive Rating: Pulse width limited by maximum junction temperature.
a2: Surface Mounted on FR4 Board, t10sec.
a3: Pulse Test: Pulse Width300s, Duty Cycle2%.
a4: Guaranteed by design, not subject to production.
a5: EAS conditionTj=25, VDD=15V, VGS=10V, L=1.0mH, Rg=25.
2410121435_GL-GL50N03A4_C2886418.pdf
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