Power Switching Silicon N Channel MOSFET GL GL18N25A4 Featuring TO 252 Package and RoHS Compliance
Key Attributes
Model Number:
GL18N25A4
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
18A
RDS(on):
175mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Output Capacitance(Coss):
180pF
Input Capacitance(Ciss):
1.14nF
Pd - Power Dissipation:
156W
Gate Charge(Qg):
20.5nC@10V
Mfr. Part #:
GL18N25A4
Package:
TO-252
Product Description
Product Overview
The GL18N25A4 is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and increased efficiency. The device is packaged in a RoHS-compliant TO-252 package.
Product Attributes
- Brand: Guang Lei ()
- Origin: Wuxi, China
- Material: Silicon N-Channel Power MOSFET
- Package: TO-252
- Certifications: RoHS compliant
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc=25 unless otherwise specified) | ||||||
| VDSS | Drain-to-Source Voltage | -- | -- | 250 | V | |
| ID | Continuous Drain Current | -- | -- | 18 | A | |
| ID | Continuous Drain Current | TC=100 C | -- | -- | 11.2 | A |
| IDM a1 | Pulsed Drain Current | -- | -- | 72 | A | |
| VGS | Gate-to-Source Voltage | -30 | -- | +30 | V | |
| EAS | Single Pulse Avalanche Energy | -- | -- | 750 | mJ | |
| EAR a1 | Avalanche Energy, Repetitive | -- | -- | 90 | mJ | |
| IAR a1 | Avalanche Current | -- | -- | 4.2 | A | |
| dv/dta3 | Peak Diode Recovery dv/dt | -- | -- | 5.0 | V/ns | |
| PD | Power Dissipation | -- | -- | 156 | W | |
| Derating Factor above 25C | -- | 1.25 | -- | W/ | ||
| TJ, Tstg | Operating Junction and Storage Temperature Range | -55 | -- | 150 | ||
| TL | Maximum Temperature for Soldering | -- | -- | 300 | ||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||||
| OFF Characteristics | ||||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 250 | -- | -- | V |
| IDSS | Drain to Source Leakage Current | VDS=250V, VGS=0V, Ta=25 | -- | -- | 1.0 | A |
| VDS=200V, VGS=0V, Ta=125 | -- | -- | 10 | A | ||
| IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | -- | -- | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -- | -- | -100 | nA |
| ON Characteristics | ||||||
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V, ID=10.0A | -- | 0.175 | 0.195 | |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=250A | 2.0 | -- | 4.0 | V |
| gfs | Forward Transconductance | VDS=15V, ID=9A | -- | 8.0 | -- | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHz | -- | 1140 | -- | pF |
| Coss | Output Capacitance | -- | 180 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 17 | -- | pF | |
| Resistive Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | ID=18A, VDD=100V, VGS=10V, Rg=2.4 | -- | 19 | -- | ns |
| tr | Rise Time | -- | 33 | -- | ns | |
| td(OFF) | Turn-Off Delay Time | -- | 35 | -- | ns | |
| tf | Fall Time | -- | 8 | -- | ns | |
| Qg | Total Gate Charge | ID=18A, VDD=200V, VGS=10V | -- | 20.5 | -- | nC |
| Qgs | Gate to Source Charge | -- | 7.5 | -- | nC | |
| Qgd | Gate to Drain (Miller) Charge | -- | 7.5 | -- | nC | |
| Source-Drain Diode Characteristics | ||||||
| ISD | Continuous Source Current (Body Diode) | -- | -- | 18 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | -- | -- | 72 | A | |
| VSD | Diode Forward Voltage | IS=18A, VGS=0V | -- | -- | 1.5 | V |
| trr | Reverse Recovery Time | IS=18A, Tj=25, dIF/dt=100A/s, VGS=0V | -- | 160 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 880 | -- | nC | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-to-Case | -- | -- | 0.8 | / W | |
| RJA | Thermal Resistance, Junction-to-Ambient | -- | -- | 62.5 | / W | |
Applications: Power switch circuit of PC POWER.
Features: Fast Switching, Low ON Resistance (Typical: 0.175), Low Gate Charge (Typical Data: 20.5nC), Low Reverse transfer capacitances (Typical: 17pF), 100% Single Pulse avalanche energy Test.
2410121643_GL-GL18N25A4_C3025199.pdf
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