Low Gate Charge N Channel MOSFET GL GL540A8P with TO 220AB Package and High Avalanche Current Rating
Key Attributes
Model Number:
GL540A8P
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
33A
Operating Temperature -:
-55℃~+175℃
RDS(on):
44mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Pd - Power Dissipation:
150W
Input Capacitance(Ciss):
2.7nF
Gate Charge(Qg):
37nC@10V
Mfr. Part #:
GL540A8P
Package:
TO-220AB-3
Product Description
Product Overview
The GL540A8P is a N-Channel Power MOSFET from GL Silicon, manufactured by Wuxi Guang Lei Electronic Technology Co., LTD. It utilizes advanced Planr technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. The MOSFET is housed in a TO-220AB package that complies with RoHS standards, offering high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and excellent heat dissipation.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
- Channel Type: N-Channel
- Package Type: TO-220AB
- RoHS Standard: Compliant
Technical Specifications
| Parameter | Test Conditions | Rating | Units | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| General Description | ||||||
| Drain-to-Source Voltage (VDSS) | 100 | V | ||||
| Continuous Drain Current (ID) | 33 | A | ||||
| Pulsed Drain Current (IDM) | 132 | A | ||||
| Gate-to-Source Voltage (VGS) | 20 | V | ||||
| Power Dissipation (PD) | (Tc= 25) | 150 | W | |||
| Single Pulse Avalanche Energy (EAS) | (a5) | 750 | mJ | |||
| Operating Junction and Storage Temperature Range (TJ, Tstg) | 55 to 175 | 175 | ||||
| Electrical Characteristics (Tc= 25 unless otherwise specified) | ||||||
| OFF Characteristics | ||||||
| Drain to Source Breakdown Voltage (VDSS) | VGS=0V, ID=250A | 100 | V | 100 | -- | -- |
| Drain to Source Leakage Current (IDSS) | VDS=100V, VGS= 0V,Ta=25 | 1.0 | A | -- | -- | 1.0 |
| Gate to Source Forward Leakage (IGSS(F)) | VGS=+20V | 0.1 | A | -- | -- | 0.1 |
| Gate to Source Reverse Leakage (IGSS(R)) | VGS=-20V | -0.1 | A | -- | -- | -0.1 |
| ON Characteristics (a3) | ||||||
| Drain-to-Source On-Resistance (RDS(ON)) | VGS=10V,ID=17A | 44 | m | -- | 30 | 44 |
| Gate Threshold Voltage (VGS(TH)) | VDS=VGS,ID=250A | 4.0 | V | 2.0 | -- | 4.0 |
| Dynamic Characteristics (a4) | ||||||
| Forward Transconductance (gfs) | VDS=15V,ID=17A | 80 | S | -- | 80 | -- |
| Input Capacitance (Ciss) | VGS=0V,VDS=25V, f=1.0MHz | 2700 | pF | -- | 2700 | -- |
| Output Capacitance (Coss) | 300 | pF | -- | 300 | -- | |
| Reverse Transfer Capacitance (Crss) | 10 | pF | -- | 10 | -- | |
| Resistive Switching Characteristics (a4) | ||||||
| Turn-on Delay Time (td(ON)) | VDD=50V,ID=17A, VGS=10V,RG=9.1 | 18 | ns | -- | 18 | -- |
| Rise Time (tr) | 20 | ns | -- | 20 | -- | |
| Turn-Off Delay Time (td(OFF)) | 53 | ns | -- | 53 | -- | |
| Fall Time (tf) | 7 | ns | -- | 7 | -- | |
| Total Gate Charge (Qg) | VDD=50V, ID=17A, VGS=10V | 37 | nC | -- | 37 | -- |
| Gate to Source Charge (Qgs) | 11 | nC | -- | 11 | -- | |
| Gate to Drain (Miller)Charge (Qgd) | 8 | nC | -- | 8 | -- | |
| Source-Drain Diode Characteristics | ||||||
| Continuous Source Current (IS) | (a2(Body Diode)) | 33 | A | -- | -- | 33 |
| Diode Forward Voltage (VSD) | IS=33A,VGS=0V (a3) | 1.2 | V | -- | -- | 1.2 |
| Reverse recovery time (trr) | IF=33, diF/dt=100A/s | 150 | ns | -- | -- | 150 |
| Reverse recovery charge (Qrr) | 0.55 | uC | -- | -- | 0.55 | |
| Thermal Characteristics | ||||||
| Junction-to-Case (RJC) | (a2) | 1.0 | /W | 1.0 | ||
| Junction-to-Ambient (RJA) | (a1) | 62 | /W | 62 | ||
Notes:
(a1): Repetitive Rating: Pulse width limited by maximum junction temperature.
(a2): Surface Mounted on FR4 Board, t10sec.
(a3): Pulse Test: Pulse Width300s, Duty Cycle2%.
(a4): Guaranteed by design, not subject to production.
(a5): EAS conditionTj=25,VDD=35V,VG=10V,L=0.5mH,Rg=25 Test circurt
2411220214_GL-GL540A8P_C2886421.pdf
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