Low RDS ON N Channel MOSFET GL GL20N10B4S with Fast Switching and Single Pulse Avalanche Energy Test
Key Attributes
Model Number:
GL20N10B4S
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+175℃
RDS(on):
75mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3pF
Number:
1 N-channel
Output Capacitance(Coss):
55pF
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
410pF
Gate Charge(Qg):
7nC@10V
Mfr. Part #:
GL20N10B4S
Package:
TO-252-2
Product Description
Product Overview
The GL20N10B4S is an N-Channel Power MOSFET from Wuxi Guang Lei Electronic Technology Co., LTD. Utilizing advanced trench technology, it offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. This RoHS-compliant component comes in a TO-252 package and features fast switching, low gate charge and Rdson, low reverse transfer capacitances, and 100% single pulse avalanche energy testing.
Product Attributes
- Brand: GL Silicon
- Manufacturer: Wuxi Guang Lei Electronic Technology Co., LTD
- Channel Type: N-Channel
- Package Type: TO-252
- Compliance: RoHS
Technical Specifications
| Model | VDSS (V) | ID (A) | PD (W) | RDS(ON) (m) |
|---|---|---|---|---|
| GL20N10B4S | 100 | 20 (Tc=25) / 14 (Tc=100) | 45 | 75 (Typ.) |
| Parameter | Test Conditions | Rating | Units |
|---|---|---|---|
| Absolute Maximum Ratings (Tc=25 unless otherwise specified) | |||
| Drain-to-Source Voltage (VDSS) | 100 | V | |
| Continuous Drain Current (ID) | Tc=25 | 20 | A |
| Continuous Drain Current (ID) | Tc=100 | 14 | A |
| Pulsed Drain Current (IDM) | 80 | A | |
| Gate-to-Source Voltage (VGS) | 20 | V | |
| Single Pulse Avalanche Energy (EAS) | Tj=25, VDD=40V, VG=10V, L=0.5mH, Rg=25 | 89 | mJ |
| Avalanche Energy, Repetitive (EAR) | 4.2 | mJ | |
| Avalanche Current (IAR) | 15 | A | |
| Peak Diode Recovery dv/dt (dv/dt) | ISD =20A,di/dt 100A/us,VDDBVDS, Start TJ=25 | 5.0 | V/ns |
| Power Dissipation (PD) | 45 | W | |
| Operating Junction and Storage Temperature Range (TJ, Tstg) | 55 to 175 | ||
| Maximum Temperature for Soldering (TL) | 300 | ||
| Electrical Characteristics (Tc=25 unless otherwise specified) | |||
| OFF Characteristics | |||
| Drain to Source Breakdown Voltage (VDSS) | VGS=0V, ID=250A | 100 | V |
| Bvdss Temperature Coefficient (BVDSS/TJ) | ID=250uA,Reference25 | 0.1 | V/ |
| Drain to Source Leakage Current (IDSS) | VDS=100V,VGS= 0V,Ta=25 | 1 | A |
| Drain to Source Leakage Current (IDSS) | VDS=80V,VGS=0V,Ta=125 | 250 | A |
| Gate to Source Forward Leakage (IGSS(F)) | VGS=+20V | 1 | A |
| Gate to Source Reverse Leakage (IGSS(R)) | VGS=-20V | -1 | A |
| ON Characteristics | |||
| Drain-to-Source On-Resistance (RDS(ON)) | VGS=10V,ID=10A | 75 | m |
| Gate Threshold Voltage (VGS(TH)) | VDS = VGS, ID = 250A | 1.0 to 3.0 (Typ. 2.0) | V |
| Dynamic Characteristics | |||
| Input Capacitance (Ciss) | VGS=0V,VDS=50V f=1.0MHz | 410 | pF |
| Output Capacitance (Coss) | 55 | pF | |
| Reverse Transfer Capacitance (Crss) | 3 | pF | |
| Resistive Switching Characteristics | |||
| Turn-on Delay Time (td(ON)) | ID=10A,VDD=50V VGS=10V,RG=3.0 | 5.5 | ns |
| Rise Time (tr) | 3.2 | ns | |
| Turn-Off Delay Time (td(OFF)) | 7 | ns | |
| Fall Time (tf) | 1.8 | ns | |
| Total Gate Charge (Qg) | ID=10A,VDD=50V VGS=10V | 7 | nC |
| Gate to Source Charge (Qgs) | 1.5 | nC | |
| Gate to Drain (Miller)Charge (Qgd) | 2.3 | nC | |
| Source-Drain Diode Characteristics | |||
| Continuous Source Current (Body Diode) (IS) | 20 | A | |
| Maximum Pulsed Current (Body Diode) (ISM) | 80 | A | |
| Diode Forward Voltage (VSD) | IS=20A,VGS=0V | 1.5 | V |
| Reverse Recovery Time (trr) | IS=20A,Tj=25C dIF/dt=100A/us,VGS=0V | 35 | ns |
| Reverse Recovery Charge (Qrr) | 51 | nC | |
| Thermal Characteristics | |||
| Junction-to-Case (RJC) | 3.33 | /W | |
2411220158_GL-GL20N10B4S_C2886413.pdf
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