TO252 Plastic Encapsulate Transistor GOODWORK MJD122 Featuring High DC Current Gain and Damper Diode
Key Attributes
Model Number:
MJD122
Product Custom Attributes
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
1.75W
DC Current Gain:
1000@4A,4V
Type:
NPN
Current - Collector(Ic):
8A
Collector - Emitter Voltage VCEO:
100V
Mfr. Part #:
MJD122
Package:
TO-252
Product Description
Product Overview
The MJD122 M is a TO-252 Plastic-Encapsulate Transistor featuring high DC current gain and a built-in damper diode at the E-C junction. It is electrically similar to the popular TIP122 and complementary to the MJD127.
Product Attributes
- Brand: MJD
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Collector-base voltage | BVCBO | 100 | V | |||
| Collector-emitter voltage | BVCEO | 100 | V | |||
| Emitter-base voltage | BVEBO | 5 | V | |||
| Collector current (DC) | IC | 8 | A | |||
| Collector current (Pulse) | ICP | 8 | A | |||
| Collector Dissipation (TA =25 ) | PC | 1.75 | W | |||
| Collector Dissipation (TC =25 ) | PC | 20 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Collector cut-off current | ICBO | VCB = 100V, IE = 0 | 10 | A | ||
| Collector cut-off current | ICEO | VCE = 50V, IE = 0 | 10 | A | ||
| Emitter cut-off current | IEBO | VEB = 5V, IC = 0 | 2 | mA | ||
| DC current gain* | hFE | VCE= 4V, IC= 4A | 1000 | |||
| DC current gain* | hFE | VCE= 4V, IC= 8A | 500 | |||
| Collector-emitter saturation voltage* | VCE(sat) | IC =4A, IB = 16mA | 2 | V | ||
| Collector-emitter saturation voltage* | VCE(sat) | IC =8A, IB = 80mA | 4 | V | ||
| Baser-emitter saturation voltage* | VBE(sat) | IC =8A, IB = 80mA | 4.5 | V | ||
| Base-emitter on voltage* | VBE (on) | VCE= 4V, IC= 4A | 2.8 | V | ||
| Output capacitance | Cob | VCB= 10V, f=1MHz | 200 | pF |
2504101957_GOODWORK-MJD122_C46061579.pdf
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