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quality High reliability switching transistor GOODWORK MMBT4403 suitable for electronic circuit applications factory
quality High reliability switching transistor GOODWORK MMBT4403 suitable for electronic circuit applications factory

High reliability switching transistor GOODWORK MMBT4403 suitable for electronic circuit applications

Key Attributes
Model Number: MMBT4403
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
-
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT4403
Package:
SOT-23
Product Description

MMBT4403 PNP TRANSISTOR

The MMBT4403 is a PNP transistor designed for switching applications. It offers key features suitable for various electronic circuits.

Product Attributes

  • Marking Type number: MMBT4403
  • Marking code: 2T

Technical Specifications

Parameter Symbol Test conditions Min Typ Max Unit
Collector-Base Voltage VCBO IC = -100uA, IE = 0 -40 V
Collector-Emitter Voltage VCEO IC = -1 mA, IB = 0 -40 V
Emitter-Base Voltage VEBO IE = -100uA, IC = 0 -5 V
Collector Current - Continuous IC -600 mA
Collector Power Dissipation PC (Ta=25 unless otherwise noted) 300 mW
Thermal Resistance From Junction To Ambient RthJA 417 /W
Operation Junction and Storage Temperature Range TJ,Tstg -55 150
Collector cut-off current ICBO VCB = -35V, IE = 0 -0.1 uA
Collector cut-off current ICEX VEB = -4V, IC =0 -0.1 uA
Emitter cut-off current IEBO VCE = -1V, IC=-10mA -30 uA
DC current gain hFE1 VCE = -35V, V =0.4V EB 60
DC current gain hFE2 IC = -150mA, IB = -15mA 100
DC current gain hFE3 IC = -150mA, IB = -15mA 200 300
DC current gain hFE4 IC = -500mA, IB = -50mA 100
DC current gain hFE5 IC = -500mA, IB = -50mA 225
Collector-emitter saturation voltage VCE(sat) IC = -150mA, IB = -15mA -0.4 -0.75 V
Collector-emitter saturation voltage VCE(sat) IC = -500mA, IB = -50mA -1.2 -1.3 V
Base-emitter saturation voltage VBE(sat) IC = -150mA, IB = -15mA -0.95 V
Delay time td VCC = -30V, IC = -150mA, IB1= 15mA, IB2=-15mA 30 ns
Rise time tr VCC = -30V, IC = -150mA, IB1= 15mA, IB2=-15mA 60 ns
Storage time ts VCC = -30V, IC = -150mA, IB1= 15mA, IB2=-15mA 200 ns
Fall time tf VCC = -30V, IC = -150mA, IB1= 15mA, IB2=-15mA 77 ns
Transition frequency fT VCE = -20V, IC = -20mA, f=100MHz 200 MHz
Collector-breakdown voltage V(BR)CBO IC = -100uA, IE = 0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC = -1 mA, IB = 0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE = -100uA, IC = 0 -5 V

2410010101_GOODWORK-MMBT4403_C2943750.pdf

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