Dual PNP transistor solution GOODWORK BCM857BS offering compact size and reduced mutual interference
Product Overview
The BCM857BS is a SOT-363 dual transistor package containing two PNP transistors. This configuration reduces component count and board space while preventing mutual interference between the transistors. It is suitable for applications requiring two PNP transistors in a compact form factor.
Product Attributes
- Brand: BCM857BS
- Package: SOT-363
- Transistor Type: Dual PNP+PNP
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | Ic=-10A,IE=0 | -50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | Ic=-10mA,IB=0 | -45 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A,IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-30V,IE=0 | -15 | nA | ||
| DC current gain | hFE | VCE=-5V,IC=-2mA | 200 | 450 | ||
| Collector-emitter saturation voltage | VCE(sat)(1) | IC=-10mA,IB=-0.5mA | -0.3 | V | ||
| Collector-emitter saturation voltage | VCE(sat)(2) | IC=-100mA,IB=-5mA | -0.65 | V | ||
| Base-emitter voltage | VBE(1) | VCE=-5V,IC=-2mA | -0.6 | -0.75 | V | |
| Base-emitter voltage | VBE(2) | VCE=-5V,IC=-10mA | -0.82 | V | ||
| Transition frequency | fT | VCE=-5V,IC=-10mA,f=100MHz | 200 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V,IE=0,f=1MHz | 3.5 | pF | ||
| Noise figure | NF | VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2K,BW=200Hz | 2.5 | dB | ||
| Collector Power Dissipation | PC | Ta=25 | 0.3 | W | ||
| Thermal Resistance Junction to Ambient | RJA | 417 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 |
2504161540_GOODWORK-BCM857BS_C47435898.pdf
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