Dual PNP transistor solution GOODWORK BCM857BS offering compact size and reduced mutual interference

Key Attributes
Model Number: BCM857BS
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
BCM857BS
Package:
SOT-363
Product Description

Product Overview

The BCM857BS is a SOT-363 dual transistor package containing two PNP transistors. This configuration reduces component count and board space while preventing mutual interference between the transistors. It is suitable for applications requiring two PNP transistors in a compact form factor.

Product Attributes

  • Brand: BCM857BS
  • Package: SOT-363
  • Transistor Type: Dual PNP+PNP

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIc=-10A,IE=0-50V
Collector-emitter breakdown voltageV(BR)CEOIc=-10mA,IB=0-45V
Emitter-base breakdown voltageV(BR)EBOIE=-10A,IC=0-5V
Collector cut-off currentICBOVCB=-30V,IE=0-15nA
DC current gainhFEVCE=-5V,IC=-2mA200450
Collector-emitter saturation voltageVCE(sat)(1)IC=-10mA,IB=-0.5mA-0.3V
Collector-emitter saturation voltageVCE(sat)(2)IC=-100mA,IB=-5mA-0.65V
Base-emitter voltageVBE(1)VCE=-5V,IC=-2mA-0.6-0.75V
Base-emitter voltageVBE(2)VCE=-5V,IC=-10mA-0.82V
Transition frequencyfTVCE=-5V,IC=-10mA,f=100MHz200MHz
Collector output capacitanceCobVCB=-10V,IE=0,f=1MHz3.5pF
Noise figureNFVCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2K,BW=200Hz2.5dB
Collector Power DissipationPCTa=250.3W
Thermal Resistance Junction to AmbientRJA417/W
Operation Junction and Storage Temperature RangeTJ,Tstg-55+150

2504161540_GOODWORK-BCM857BS_C47435898.pdf

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