SOT23 PNP transistor GOODWORK 2N5401 designed for medium power amplification and switching functions
Key Attributes
Model Number:
2N5401
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
2N5401
Package:
SOT-23
Product Description
Product Overview
The 2N5401 is a PNP bipolar junction transistor (BJT) designed for medium power amplification and switching applications. It is complementary to the MMBT5551, offering ideal performance characteristics for these tasks.
Product Attributes
- Brand: DEMACHEL
- Model: 2N5401
- Type: PNP TRANSISTOR
- Package: SOT-23
- Marking Code: 2L
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| CollectorBase Voltage | VCBO | -160 | V | |||
| CollectorEmitter Voltage | VCEO | -150 | V | |||
| EmitterBase Voltage | VEBO | -5 | V | |||
| Collector Current - Continuous | IC | -0.6 | A | |||
| Collector Dissipation | PC | 0.3 | W | |||
| Thermal Resistance Junction To Ambient | RthJA | 416 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC =-100uA, IE = 0 | -160 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC =-1 mA, IB = 0 | -150 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE =-10uA, IC = 0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB =-120V, IE = 0 | -0.1 | uA | ||
| Emitter cut-off current | IEBO | VEB =-4V, IC = 0 | -0.1 | -0.2 | uA | |
| DC current gain | hFE1 | VC =-25V, IC =-10mA, IE = 80 | ||||
| DC current gain | hFE2 | IC =-50mA, IB =-5mA | 100 | |||
| DC current gain | hFE3 | IC =-10mA, IB =-1mA | 50 | 100 | ||
| Collector-emitter saturation voltage | VCE(sat)1 | IC =-10mA, IB =-1mA | -0.5 | V | ||
| Collector-emitter saturation voltage | VCE(sat)2 | IC =-50mA, IB =-5mA | -1 | V | ||
| Base-emitter saturation voltage | VBE(sat)1 | IC =-10mA, IB =-1mA | -0.77 | -1 | V | |
| Base-emitter saturation voltage | VBE(sat)2 | IC =-50mA, IB =-5mA | -1 | -1.2 | V | |
| Transition frequency | fT | VC =-25V, IC =-10mA, f=30MHz | 300 | MHz | ||
| Capacitance (output) | Cob | VCB = -10V, IE = 0, f=1MHz | 10 | pF | ||
| Capacitance (input) | Cib | Vcb = -10V, IE = 0, f=1MHz | 20 | pF |
2504111540_GOODWORK-2N5401_C47435903.pdf
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