Collector Current 1.5A PNP Bipolar Transistor GOODWORK MMBT8550D Voltage 40V Suitable for Circuits

Key Attributes
Model Number: MMBT8550D(1.5A)
Product Custom Attributes
Mfr. Part #:
MMBT8550D(1.5A)
Package:
SOT-23
Product Description

MMBT8550D PNP TRANSISTOR

The MMBT8550D is a PNP bipolar transistor designed for general-purpose applications. It offers high collector current capabilities and is suitable for various electronic circuits.

Product Attributes

  • Marking Type number: MMBT8550D
  • Marking code: Y2

Technical Specifications

ParameterSymbolTest conditionsMinMaxUnit
Collector-Base VoltageVCBO-40V
Collector-Emitter VoltageVCEO-25V
Emitter-Base VoltageVEBO-5V
Collector Current - ContinuousIC-1.5A
Collector DissipationPC200mW
Operation Junction and Storage Temperature RangeTJ,Tstg-55+150
Thermal Resistance From Junction To AmbientRthJA625/W
Collector-base breakdown voltageV(BR)CBOIC =-100uA, IE = 0-40V
Collector-emitter breakdown voltageV(BR)CEOIC =-0.1 mA, IB = 0-25V
Emitter-base breakdown voltageV(BR)EBOIE =-100uA, IC = 0-5V
Collector cut-off currentICBOVCB =-40V, IE = 0-0.1uA
Collector cut-off currentICBOVEB =-5V, IC = 0-0.1uA
DC current gainhFE1VC =-10V, IC =-50mA, IB = -0.1 mA120
DC current gainhFE2IC =-800mA, IB =-80mA400
Transition frequencyfTVC =-10V, IC =-50mA30MHz
Emitter cut-off currentIEBOVC =-20V, IB =0-0.1uA
Collector-emitter saturation voltageVCE(sat)IC =-800mA, IB =-80mA-1.2V
Base-emitter saturation voltageVBE(sat)IC =-800mA, IB =-80mA-1.5V
Base-emitter voltageVBEVC =-10V, IC =-10mA-1V
Collector output capacitanceCobVC =-10V, IE =0, f=1MHz20pF

hFE Classification

RANKRANGE
L300-400
H200-350
J120-200

2512301500_GOODWORK-MMBT8550D-1-5A_C53260781.pdf

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