electronic transistor GOODWORK MMBT8050D NPN type suitable for switching and amplification circuits

Key Attributes
Model Number: MMBT8050D
Product Custom Attributes
Mfr. Part #:
MMBT8050D
Package:
SOT-23
Product Description

MMBT8050D NPN Transistor

The MMBT8050D is an NPN transistor designed for general-purpose applications. Its robust design and specific electrical characteristics make it suitable for various switching and amplification tasks in electronic circuits.

Product Attributes

  • Marking Code: J3Y
  • Package: SOT-23

Technical Specifications

Parameter Symbol Test conditions Min Typ Max Unit
CollectorBase Voltage VCBO 40 V
CollectorEmitter Voltage VCEO 25 V
EmitterBase Voltage VEBO 5 V
Collector Current Continuous IC 500 mA
Collector Power Dissipation PC 300 mW
Operation Junction and Storage Temperature Range TJ,Tstg -55 +150
Thermal Resistance From Junction To Ambient RthJA 417 /W
Collector-base breakdown voltage V(BR)CBO IC = 100uA, IE = 0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 25 V
Emitter-base breakdown voltage V(BR)EBO IE = 100uA, IC = 0 5 V
Collector cut-off current ICBO VCB = 40V, IE = 0 0.1 uA
Emitter cut-off current IEBO VEB = 5V, IC =0 0.1 uA
DC current gain hFE1 VCE = 1V, IC = 50mA 120 400
DC current gain hFE2 IC = 500mA, IB = 50mA 150
Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA 0.6 1.2 V
Base-emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA 0.6 1.2 V
Transition frequency fT VCE = 6V, IC = 20mA, f=30MHz 100 MHZ
Collector cut-off current ICEO VCE = 20V, IB=0 0.1 uA

2512301500_GOODWORK-MMBT8050D_C53260778.pdf

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