Epitaxial silicon planar PNP transistor for switching applications RoHS compliant GOODWORK 2SA1015

Key Attributes
Model Number: 2SA1015
Product Custom Attributes
Mfr. Part #:
2SA1015
Package:
SOT-23
Product Description

PNP General Purpose Switching Transistor - BA

This PNP epitaxial silicon planar transistor is designed for general purpose switching applications. It offers a collector-emitter voltage of -50V and a collector current of -0.15A, with a total device dissipation of 0.2W on an FR-5 board. The transistor is RoHS 2002/95/EC compliant and features a transition frequency greater than 80MHz. It is supplied in a SOT-23 package.

Product Attributes

  • Brand: Not specified (Implied 2SA1015)
  • Origin: Not specified
  • Material: Epitaxial silicon, planar design
  • Color: Not specified
  • Certifications: RoHS 2002/95/EC

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -0.15 A
Total Device Dissipation (FR-5 BOARD) PD 0.2 W
Thermal Resistance Junction to Ambient RJA 625 OC/W
Junction Temperature TJ 150 OC
Storage Temperature TSTG -55 +150 OC
Collector-Base breakdown voltage V(BR)CBO IC=-100uA,IE=0 -50 V
Collector-Emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0 -50 V
Emitter-Base breakdown voltage V(BR)EBO IE=-100uA,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IC=0 -0.1 uA
Collector cut-off current ICEX -0.1 uA
Base cut-off current IBEX -0.1 uA
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 uA
DC current gain HFE IC=-2mA,VCE=-6V 130 400
DC current gain HFE IC=-10mA,IB=-1mA 100
DC current gain HFE IC=-100mA,IB=-10mA 100
Collector-Emitter saturation voltage VCE(SAT) IC=-10mA,IB=-1mA -0.2 V
Collector-Emitter saturation voltage VCE(SAT) IC=-100mA,IB=-10mA -0.3 V
Base-Emitter Saturation voltage VBE(SAT) IC=-10mA,IB=-1mA -0.85 V
Base-Emitter Saturation voltage VBE(SAT) IC=-100mA,IB=-10mA -0.95 V
Input capacitance CIB VCB=-5V,IE=0,f=1MHZ 4.0 pF
Output capacitance COB VEB=-0.5V,IC=0,f=1MHZ 8.0 pF
Transition ferquency fT IC=-1mA,VCE=-10V, f=30MHZ 150 MHZ
Delay time td VCC=-3V,VBE=0.5V, IC=-10mA,IB=-1mA 35 nS
Rise time tr VCC=-3V,VBE=0.5V, IC=-10mA,IB=-1mA 35 nS
Storage time ts VCC=-3V,VBE=0.5V, IB1=IB2=-1mA 200 nS
Fall time tf VCE=-25V,IB=0 50 nS

2512041144_GOODWORK-2SA1015_C53086333.pdf

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