NPN Silicon Transistor with High Voltage and Current Capability GOODWORK CXT5551 Surface Mount Device
Key Attributes
Model Number:
CXT5551
Product Custom Attributes
Current - Collector Cutoff:
50nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
1.2W
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-65℃~+150℃@(Tj)
Mfr. Part #:
CXT5551
Package:
SOT-89
Product Description
Product Overview
The CXT5551 is a Surface Mount NPN Silicon Transistor featuring a simplified SOT-89 outline. It offers high current capability (max. 500mA) and high voltage (max. 150 V), making it suitable for various electronic applications.
Product Attributes
- Brand: CXT5551
- Package: SOT-89
- Type: NPN Silicon Transistor
- Pinout: 1.Base, 2.Collector, 3.Emitter
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | VCBO | IC=100 A | 180 | V | ||
| Collector-emitter breakdown voltage | VCEO | IC=1.0mA | 160 | V | ||
| Emitter-base breakdown voltage | VEBO | IE=10 A | 6.0 | V | ||
| Collector cutoff current | ICBO | VCB = 120 V, IE = 0 | 50 | nA | ||
| Collector cutoff current | ICBO | VCB = 120 V, TA=100 | 50 | A | ||
| DC current gain | hFE | IC = 1.0 mA; VCE = 5.0 V | 80 | |||
| DC current gain | hFE | IC = 10mA; VCE = 5.0V | 80 | 250 | ||
| DC current gain | hFE | IC = 50 mA; VCE = 5.0V | 30 | |||
| Collector to emitter saturation voltage | VCE(sat) | IC = 10 mA; IB = 1.0mA | 0.15 | V | ||
| Collector to emitter saturation voltage | VCE(sat) | IC = 50 mA; IB = 5.0mA | 0.20 | V | ||
| Base to emitter saturation voltage | VBE(sat) | IC = 10 mA; IB = 1.0mA | 1.00 | V | ||
| Base to emitter saturation voltage | VBE(sat) | IC = 50 mA; IB = 5.0mA | 1.00 | V | ||
| Output capacitance | Cob | VCB = 10 V, IE = 0,f=1.0MHz | 6.0 | pF | ||
| Transition frequency | fT | IC = 10 mA; VCE =10V; f = 100 MHz | 100 | 300 | MHz |
| Parameter | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 180 | V |
| Collector-emitter voltage | VCEO | 160 | V |
| Emitter-base voltage | VEBO | 6 | V |
| Collector current (DC) | IC | 600 | mA |
| Power dissipation | PD | 1.2 | W |
| Junction-to-ambient thermal resistance | R JA | 104 | /W |
| Junction temperature | Tj | 150 | |
| Storage temperature | Tstg | -65 to +150 |
2504101957_GOODWORK-CXT5551_C42456342.pdf
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